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Influence of Driving Circuit Parameters and Layout Compactness on the Optimum Selection of Gate-Source Voltage Test Point for SiC MOSFETs | IEEE Conference Publication | IEEE Xplore

Influence of Driving Circuit Parameters and Layout Compactness on the Optimum Selection of Gate-Source Voltage Test Point for SiC MOSFETs | IEEE Conference Publication | IEEE Xplore

Accurate measurement of the gate-source voltage for silicon carbide (SiC) MOSFET is an essential prerequisite for correctly evaluating the reliability of driving circuit. Due to the high switching speed of SiC MOSFET, it is more sensitive to parasitic parameters of...

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