Actualités
Analysis of an AlGaN/AlN Super-Lattice Buffer Concept for 650-V Low-Dispersion and High-Reliability GaN HEMTs – IEEE Journals & Magazine
In this article, an optimized carbon-doped AlGaN/AlN super-lattice (SL) buffer structure for GaN-based high electron mobility transistors, grown on 200-mm Si wafers is demonstrated. The resulting transistor structure features: 1) maximum vertical breakdown strength as...
Reliability of SiC MOSFET with Danfoss Bond Buffer Technology in Automotive Traction Power Modules – VDE Conference Publication
This paper describes reliability investigations in terms of power cycling tests for a new generation of top-side sintered or soldered 1200 V silicon carbide (SiC) MOSFETs for use in an advanced power module, designed for operation with 800 V bus voltage in electric...
Dynamic Temperature Measurements of a GaN DC–DC Boost Converter at MHz Frequencies – IEEE Journals & Magazine
For reliability predictions, gallium nitride transistors require accurate estimations of the peak operating temperatures within the device. This article presents a new application of thermoreflectance-based temperature measurements performed on a gallium nitride high...
Packaging for SiC power device – IEEE Conference Publication
The wide band gap nature of SiC semiconductor makes high voltage power device possible to operate at high temperature. The high temperature operation of power device is expected to realize simplification of cooling system and miniaturizing the system size with smaller...
A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution – IEEE Journals & Magazine
We review the Raman thermography technique, which has been developed to determine the temperature in and around the active area of semiconductor devices with submicron spatial and nanosecond temporal resolution. This is critical for the qualification of device...
Thermal Characterization of SiC Modules for Variable Frequency Drives – IEEE Conference Publication
In this paper, the advantages of SiC power modules to reduce peak junction temperature and power cycling effects are presented. A detailed power loss calculation and thermal model is developed and tested on a 480 V, 190A, 150 HP variable frequency drive (VFD) with SiC...
A Novel Method for Monitoring the Junction Temperature of SiC MOSFET On-line Based on On-state Resistance – IEEE Conference Publication
Temperature estimation of MOSFET is crucial, for failure of semiconductors is closely related to the junction temperature. In order to improve the reliability of semiconductor devices, it is necessary to realize on-line temperature monitoring. However, it remains a...
Transient thermal dynamics of GaN HEMTs – IEEE Conference Publication
Although GaN high electron mobility transistors (HEMTs) are one of the most promising semiconductor technologies for high power and high frequency applications, high device temperatures often lead to degraded performance and reliability. Most reports on the thermal...
Microdrones Introduces Drone LiDAR and Surveying Services | Unmanned Systems Technology
Microdrones has launched mdaaS (Microdrones as a Service), a new program providing the company’s drone survey equipment and solutions to surveyors and geomatics professionals via convenient hardware and software packages with a monthly subscription. Customers will be...
L’usine de poudre métallique de Sandvik Additive Manufacturing obtient une certification pour l’aérospatiale
Le fabricant suédois de poudres métalliques Sandvik, a annoncé que sa nouvelle usine de poudre de titane et d’alliages à base de nickel, basée à Sandviken, avait reçu la prestigieuse certification aérospatiale AS9100D. Depuis l’inauguration de son usine de poudre fin...