Actualités
Dynamic Temperature Measurements of a GaN DC–DC Boost Converter at MHz Frequencies – IEEE Journals & Magazine
For reliability predictions, gallium nitride transistors require accurate estimations of the peak operating temperatures within the device. This article presents a new application of thermoreflectance-based temperature measurements performed on a gallium nitride high...
Packaging for SiC power device – IEEE Conference Publication
The wide band gap nature of SiC semiconductor makes high voltage power device possible to operate at high temperature. The high temperature operation of power device is expected to realize simplification of cooling system and miniaturizing the system size with smaller...
A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution – IEEE Journals & Magazine
We review the Raman thermography technique, which has been developed to determine the temperature in and around the active area of semiconductor devices with submicron spatial and nanosecond temporal resolution. This is critical for the qualification of device...
Thermal Characterization of SiC Modules for Variable Frequency Drives – IEEE Conference Publication
In this paper, the advantages of SiC power modules to reduce peak junction temperature and power cycling effects are presented. A detailed power loss calculation and thermal model is developed and tested on a 480 V, 190A, 150 HP variable frequency drive (VFD) with SiC...
A Novel Method for Monitoring the Junction Temperature of SiC MOSFET On-line Based on On-state Resistance – IEEE Conference Publication
Temperature estimation of MOSFET is crucial, for failure of semiconductors is closely related to the junction temperature. In order to improve the reliability of semiconductor devices, it is necessary to realize on-line temperature monitoring. However, it remains a...
Transient thermal dynamics of GaN HEMTs – IEEE Conference Publication
Although GaN high electron mobility transistors (HEMTs) are one of the most promising semiconductor technologies for high power and high frequency applications, high device temperatures often lead to degraded performance and reliability. Most reports on the thermal...
Microdrones Introduces Drone LiDAR and Surveying Services | Unmanned Systems Technology
Microdrones has launched mdaaS (Microdrones as a Service), a new program providing the company’s drone survey equipment and solutions to surveyors and geomatics professionals via convenient hardware and software packages with a monthly subscription. Customers will be...
L’usine de poudre métallique de Sandvik Additive Manufacturing obtient une certification pour l’aérospatiale
Le fabricant suédois de poudres métalliques Sandvik, a annoncé que sa nouvelle usine de poudre de titane et d’alliages à base de nickel, basée à Sandviken, avait reçu la prestigieuse certification aérospatiale AS9100D. Depuis l’inauguration de son usine de poudre fin...
Integration of metallic phase change material in power electronics – IEEE Conference Publication
For various pulsed power electronics like, metal oxide semiconductor field-effect transistor (MOSFET), insulating gate bipolar transistor (IGBT), Gate turn-off thyristor (GTO), Integrated gate-commutated thyristor (IGCT), heat loads are often in the range of 10W/cm2...
An ultra high performance heat sink using a novel hybrid impinging microjet — Microchannel structure – IEEE Conference Publication
This work describes the development of a single phase water-cooled microfluidic heat exchanger for cooling very high heat flux electronics. The heat sink was designed for a unique additive manufacturing process capable of manufacturing millimeter-scale metallic parts...