In this work we analysed the performance of AlGaN/GaN HEMT based on the linearity metrics for variable source/drain spacing with a fixed gate length (1μm) using Sentaurus TCAD device simulator. Various figure of merits such as transconductance, higher order...
According to Yole’s Compound Semiconductor Quarterly Market Monitor on SiC and GaN applications, SiC device market revenue continues its growth and is expected to exceed $3 billion by 2025 with EV/HEV the killer application. Meanwhile, Yole projects that the...
Innoscience Technology, entreprise fondée pour créer un écosystème énergétique mondial basé sur des solutions de puissance au nitrure de gallium sur silicium (GaN-on-Si) à la fois performantes et rentables, lance aujourd’hui le INN40W08, un transistor à haute...
Resonant tunneling metalenses have excellent applications for subwavelength ultrasonic imaging in air. In this study, an acoustic metalens intended for underwater imaging was designed with first, second, and third resonant tunneling frequencies of 10.3, 85.3, and...
Additive manufacturing has emerged as an innovative technology for the large-scale development of low-cost and disposable electrochemical devices. Hence, in this paper, we highlight the use of a 3D-printed electrode using carbon black integrated polylactic acid...
Dans le cadre d’un webinaire gratuit le 21 juin 2022 (16h00 CEST), Hervé Javice, Ralph Birnbaum et Stéphane Etienne de ioTech présenteront une technologie innovante de dépôt par laser qui est entièrement sans contact et ne dépend ni du maillage ni de la buse. Ils...