{"id":55447,"date":"2025-05-05T08:32:35","date_gmt":"2025-05-05T06:32:35","guid":{"rendered":"https:\/\/www.nae.fr\/2025\/05\/05\/a-deep-trench-type-sic-mosfet-integrated-with-schottky-diode-for-enhanced-oxide-reliability-and-switching-performances\/"},"modified":"2025-05-05T08:32:35","modified_gmt":"2025-05-05T06:32:35","slug":"a-deep-trench-type-sic-mosfet-integrated-with-schottky-diode-for-enhanced-oxide-reliability-and-switching-performances","status":"publish","type":"post","link":"https:\/\/www.nae.fr\/en\/2025\/05\/05\/a-deep-trench-type-sic-mosfet-integrated-with-schottky-diode-for-enhanced-oxide-reliability-and-switching-performances\/","title":{"rendered":"A deep trench-type SiC MOSFET integrated with Schottky diode for enhanced oxide reliability and switching performances"},"content":{"rendered":"<p class=\"wp-block-paragraph\"><blockquote>This paper presents a novel deep trench-type SiC MOSFET integrated with Schottky diodes (DT-JMOS) designed to improve oxide reliability and switching performances. In contrast to conventional SiC trench MOSFET with Schottky diodes (CT-JMOS), the DT-JMOS utilizes a narrower JFET region and a P-bot structure, resulting in superior electric field reductions in gate oxide layer to improve reliability. The unique structure also enables double-channel operation and deeper embedded Schottky contacts, significantly enhancing the current conduction capabilities in both the first and third quadrants. Furthermore, simulation results indicate that the DT-JMOS achieves a 97.6 % decrease in gate-to-drain capacitance (C<sub>gd<\/sub>), leading to a 67.5 % improvement in gate-to-drain charge (Q<sub>gd<\/sub>), and eventually resulting in reductions by factors of 3.2 and 3.5 for figure of merit Q<sub>gd<\/sub>\u00a0\u00d7 R<sub>on,sp<\/sub>\u00a0and total switching losses (E<sub>total<\/sub>), respectively. These attributes suggest that the DT-JMOS is more suitable for high-voltage and high-frequency applications.<\/blockquote><br>Pour en savoir plus : <a href=\"https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-86000167164&amp;origin=inward&amp;txGid=2cf4cb3fa279e7b63f2708ae8952d204\" target=\"_blank\" rel=\"noopener\">A deep trench-type SiC MOSFET integrated with Schottky diode for enhanced oxide reliability and switching performances<\/a><\/p>","protected":false},"excerpt":{"rendered":"<p>This paper presents a novel deep trench-type SiC MOSFET integrated with Schottky diodes (DT-JMOS) designed to improve oxide reliability and switching performances. In contrast to conventional SiC trench MOSFET with Schottky diodes (CT-JMOS), the DT-JMOS utilizes a narrower JFET region and a P-bot structure, resulting in superior electric field reductions in gate oxide layer to [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":54431,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[34,16],"tags":[35,45,30],"class_list":["post-55447","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-innovation-et-technologique","category-rti","tag-actualites","tag-electrification-et-fiabilite-des-systemes-embarques","tag-fiabilite-des-systemes-et-des-composants"],"acf":[],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v27.8 - https:\/\/yoast.com\/product\/yoast-seo-wordpress\/ -->\n<title>A deep trench-type SiC MOSFET integrated with Schottky diode for enhanced oxide reliability and switching performances | Ton Site<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.nae.fr\/en\/2025\/05\/05\/a-deep-trench-type-sic-mosfet-integrated-with-schottky-diode-for-enhanced-oxide-reliability-and-switching-performances\/\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"A deep trench-type SiC MOSFET integrated with Schottky diode for enhanced oxide reliability and switching performances | Ton Site\" \/>\n<meta property=\"og:description\" content=\"This paper presents a novel deep trench-type SiC MOSFET integrated with Schottky diodes (DT-JMOS) designed to improve oxide reliability and switching performances. In contrast to conventional SiC trench MOSFET with Schottky diodes (CT-JMOS), the DT-JMOS utilizes a narrower JFET region and a P-bot structure, resulting in superior electric field reductions in gate oxide layer to [&hellip;]\" \/>\n<meta property=\"og:url\" content=\"https:\/\/www.nae.fr\/en\/2025\/05\/05\/a-deep-trench-type-sic-mosfet-integrated-with-schottky-diode-for-enhanced-oxide-reliability-and-switching-performances\/\" \/>\n<meta property=\"og:site_name\" content=\"NAE\" \/>\n<meta property=\"article:published_time\" content=\"2025-05-05T06:32:35+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/www.nae.fr\/wp-content\/uploads\/2026\/06\/logo-scopus-200.png\" \/>\n\t<meta property=\"og:image:width\" content=\"232\" \/>\n\t<meta property=\"og:image:height\" content=\"200\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/png\" \/>\n<meta name=\"author\" content=\"adminwa\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:label1\" content=\"Written by\" \/>\n\t<meta name=\"twitter:data1\" content=\"adminwa\" \/>\n\t<meta name=\"twitter:label2\" content=\"Est. reading time\" \/>\n\t<meta name=\"twitter:data2\" content=\"1 minute\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\\\/\\\/schema.org\",\"@graph\":[{\"@type\":\"Article\",\"@id\":\"https:\\\/\\\/www.nae.fr\\\/2025\\\/05\\\/05\\\/a-deep-trench-type-sic-mosfet-integrated-with-schottky-diode-for-enhanced-oxide-reliability-and-switching-performances\\\/#article\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/www.nae.fr\\\/2025\\\/05\\\/05\\\/a-deep-trench-type-sic-mosfet-integrated-with-schottky-diode-for-enhanced-oxide-reliability-and-switching-performances\\\/\"},\"author\":{\"name\":\"adminwa\",\"@id\":\"https:\\\/\\\/www.nae.fr\\\/#\\\/schema\\\/person\\\/3d658e930f01449b7195ce4a78fcfc1e\"},\"headline\":\"A deep trench-type SiC MOSFET integrated with Schottky diode for enhanced oxide reliability and switching performances\",\"datePublished\":\"2025-05-05T06:32:35+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\\\/\\\/www.nae.fr\\\/2025\\\/05\\\/05\\\/a-deep-trench-type-sic-mosfet-integrated-with-schottky-diode-for-enhanced-oxide-reliability-and-switching-performances\\\/\"},\"wordCount\":176,\"commentCount\":0,\"publisher\":{\"@id\":\"https:\\\/\\\/www.nae.fr\\\/#organization\"},\"image\":{\"@id\":\"https:\\\/\\\/www.nae.fr\\\/2025\\\/05\\\/05\\\/a-deep-trench-type-sic-mosfet-integrated-with-schottky-diode-for-enhanced-oxide-reliability-and-switching-performances\\\/#primaryimage\"},\"thumbnailUrl\":\"https:\\\/\\\/www.nae.fr\\\/wp-content\\\/uploads\\\/2026\\\/06\\\/logo-scopus-200.png\",\"keywords\":[\"Actualit\u00e9s\",\"Electrification et fiabilit\u00e9 des syst\u00e8mes embarqu\u00e9s\",\"Fiabilit\u00e9 des syst\u00e8mes et des composants\"],\"articleSection\":[\"Innovation et technologique\",\"RTI\"],\"inLanguage\":\"en-US\",\"potentialAction\":[{\"@type\":\"CommentAction\",\"name\":\"Comment\",\"target\":[\"https:\\\/\\\/www.nae.fr\\\/2025\\\/05\\\/05\\\/a-deep-trench-type-sic-mosfet-integrated-with-schottky-diode-for-enhanced-oxide-reliability-and-switching-performances\\\/#respond\"]}]},{\"@type\":\"WebPage\",\"@id\":\"https:\\\/\\\/www.nae.fr\\\/2025\\\/05\\\/05\\\/a-deep-trench-type-sic-mosfet-integrated-with-schottky-diode-for-enhanced-oxide-reliability-and-switching-performances\\\/\",\"url\":\"https:\\\/\\\/www.nae.fr\\\/2025\\\/05\\\/05\\\/a-deep-trench-type-sic-mosfet-integrated-with-schottky-diode-for-enhanced-oxide-reliability-and-switching-performances\\\/\",\"name\":\"A deep trench-type SiC MOSFET integrated with Schottky diode for enhanced oxide reliability and switching performances | Ton Site\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/www.nae.fr\\\/#website\"},\"primaryImageOfPage\":{\"@id\":\"https:\\\/\\\/www.nae.fr\\\/2025\\\/05\\\/05\\\/a-deep-trench-type-sic-mosfet-integrated-with-schottky-diode-for-enhanced-oxide-reliability-and-switching-performances\\\/#primaryimage\"},\"image\":{\"@id\":\"https:\\\/\\\/www.nae.fr\\\/2025\\\/05\\\/05\\\/a-deep-trench-type-sic-mosfet-integrated-with-schottky-diode-for-enhanced-oxide-reliability-and-switching-performances\\\/#primaryimage\"},\"thumbnailUrl\":\"https:\\\/\\\/www.nae.fr\\\/wp-content\\\/uploads\\\/2026\\\/06\\\/logo-scopus-200.png\",\"datePublished\":\"2025-05-05T06:32:35+00:00\",\"breadcrumb\":{\"@id\":\"https:\\\/\\\/www.nae.fr\\\/2025\\\/05\\\/05\\\/a-deep-trench-type-sic-mosfet-integrated-with-schottky-diode-for-enhanced-oxide-reliability-and-switching-performances\\\/#breadcrumb\"},\"inLanguage\":\"en-US\",\"potentialAction\":[{\"@type\":\"ReadAction\",\"target\":[\"https:\\\/\\\/www.nae.fr\\\/2025\\\/05\\\/05\\\/a-deep-trench-type-sic-mosfet-integrated-with-schottky-diode-for-enhanced-oxide-reliability-and-switching-performances\\\/\"]}]},{\"@type\":\"ImageObject\",\"inLanguage\":\"en-US\",\"@id\":\"https:\\\/\\\/www.nae.fr\\\/2025\\\/05\\\/05\\\/a-deep-trench-type-sic-mosfet-integrated-with-schottky-diode-for-enhanced-oxide-reliability-and-switching-performances\\\/#primaryimage\",\"url\":\"https:\\\/\\\/www.nae.fr\\\/wp-content\\\/uploads\\\/2026\\\/06\\\/logo-scopus-200.png\",\"contentUrl\":\"https:\\\/\\\/www.nae.fr\\\/wp-content\\\/uploads\\\/2026\\\/06\\\/logo-scopus-200.png\",\"width\":232,\"height\":200},{\"@type\":\"BreadcrumbList\",\"@id\":\"https:\\\/\\\/www.nae.fr\\\/2025\\\/05\\\/05\\\/a-deep-trench-type-sic-mosfet-integrated-with-schottky-diode-for-enhanced-oxide-reliability-and-switching-performances\\\/#breadcrumb\",\"itemListElement\":[{\"@type\":\"ListItem\",\"position\":1,\"name\":\"Accueil\",\"item\":\"https:\\\/\\\/www.nae.fr\\\/\"},{\"@type\":\"ListItem\",\"position\":2,\"name\":\"A deep trench-type SiC MOSFET integrated with Schottky diode for enhanced oxide reliability and switching performances\"}]},{\"@type\":\"WebSite\",\"@id\":\"https:\\\/\\\/www.nae.fr\\\/#website\",\"url\":\"https:\\\/\\\/www.nae.fr\\\/\",\"name\":\"NAE\",\"description\":\"NAE fili\u00e8re d&#039;excellence...\",\"publisher\":{\"@id\":\"https:\\\/\\\/www.nae.fr\\\/#organization\"},\"potentialAction\":[{\"@type\":\"SearchAction\",\"target\":{\"@type\":\"EntryPoint\",\"urlTemplate\":\"https:\\\/\\\/www.nae.fr\\\/?s={search_term_string}\"},\"query-input\":{\"@type\":\"PropertyValueSpecification\",\"valueRequired\":true,\"valueName\":\"search_term_string\"}}],\"inLanguage\":\"en-US\"},{\"@type\":\"Organization\",\"@id\":\"https:\\\/\\\/www.nae.fr\\\/#organization\",\"name\":\"NAE\",\"url\":\"https:\\\/\\\/www.nae.fr\\\/\",\"logo\":{\"@type\":\"ImageObject\",\"inLanguage\":\"en-US\",\"@id\":\"https:\\\/\\\/www.nae.fr\\\/#\\\/schema\\\/logo\\\/image\\\/\",\"url\":\"https:\\\/\\\/www.nae.fr\\\/wp-content\\\/uploads\\\/2025\\\/10\\\/nae-logo.svg\",\"contentUrl\":\"https:\\\/\\\/www.nae.fr\\\/wp-content\\\/uploads\\\/2025\\\/10\\\/nae-logo.svg\",\"width\":84,\"height\":52,\"caption\":\"NAE\"},\"image\":{\"@id\":\"https:\\\/\\\/www.nae.fr\\\/#\\\/schema\\\/logo\\\/image\\\/\"}},{\"@type\":\"Person\",\"@id\":\"https:\\\/\\\/www.nae.fr\\\/#\\\/schema\\\/person\\\/3d658e930f01449b7195ce4a78fcfc1e\",\"name\":\"adminwa\",\"image\":{\"@type\":\"ImageObject\",\"inLanguage\":\"en-US\",\"@id\":\"https:\\\/\\\/secure.gravatar.com\\\/avatar\\\/5118570d863e9bebccd6a13a0e571e5515c30a2f455e20ed92788cb2b4e5c631?s=96&d=mm&r=g\",\"url\":\"https:\\\/\\\/secure.gravatar.com\\\/avatar\\\/5118570d863e9bebccd6a13a0e571e5515c30a2f455e20ed92788cb2b4e5c631?s=96&d=mm&r=g\",\"contentUrl\":\"https:\\\/\\\/secure.gravatar.com\\\/avatar\\\/5118570d863e9bebccd6a13a0e571e5515c30a2f455e20ed92788cb2b4e5c631?s=96&d=mm&r=g\",\"caption\":\"adminwa\"},\"sameAs\":[\"https:\\\/\\\/www.nae.fr\"],\"url\":\"https:\\\/\\\/www.nae.fr\\\/en\\\/author\\\/adminwa\\\/\"}]}<\/script>\n<!-- \/ Yoast SEO plugin. -->","yoast_head_json":{"title":"A deep trench-type SiC MOSFET integrated with Schottky diode for enhanced oxide reliability and switching performances | Ton Site","robots":{"index":"index","follow":"follow","max-snippet":"max-snippet:-1","max-image-preview":"max-image-preview:large","max-video-preview":"max-video-preview:-1"},"canonical":"https:\/\/www.nae.fr\/en\/2025\/05\/05\/a-deep-trench-type-sic-mosfet-integrated-with-schottky-diode-for-enhanced-oxide-reliability-and-switching-performances\/","og_locale":"en_US","og_type":"article","og_title":"A deep trench-type SiC MOSFET integrated with Schottky diode for enhanced oxide reliability and switching performances | Ton Site","og_description":"This paper presents a novel deep trench-type SiC MOSFET integrated with Schottky diodes (DT-JMOS) designed to improve oxide reliability and switching performances. In contrast to conventional SiC trench MOSFET with Schottky diodes (CT-JMOS), the DT-JMOS utilizes a narrower JFET region and a P-bot structure, resulting in superior electric field reductions in gate oxide layer to [&hellip;]","og_url":"https:\/\/www.nae.fr\/en\/2025\/05\/05\/a-deep-trench-type-sic-mosfet-integrated-with-schottky-diode-for-enhanced-oxide-reliability-and-switching-performances\/","og_site_name":"NAE","article_published_time":"2025-05-05T06:32:35+00:00","og_image":[{"width":232,"height":200,"url":"https:\/\/www.nae.fr\/wp-content\/uploads\/2026\/06\/logo-scopus-200.png","type":"image\/png"}],"author":"adminwa","twitter_card":"summary_large_image","twitter_misc":{"Written by":"adminwa","Est. reading time":"1 minute"},"schema":{"@context":"https:\/\/schema.org","@graph":[{"@type":"Article","@id":"https:\/\/www.nae.fr\/2025\/05\/05\/a-deep-trench-type-sic-mosfet-integrated-with-schottky-diode-for-enhanced-oxide-reliability-and-switching-performances\/#article","isPartOf":{"@id":"https:\/\/www.nae.fr\/2025\/05\/05\/a-deep-trench-type-sic-mosfet-integrated-with-schottky-diode-for-enhanced-oxide-reliability-and-switching-performances\/"},"author":{"name":"adminwa","@id":"https:\/\/www.nae.fr\/#\/schema\/person\/3d658e930f01449b7195ce4a78fcfc1e"},"headline":"A deep trench-type SiC MOSFET integrated with Schottky diode for enhanced oxide reliability and switching performances","datePublished":"2025-05-05T06:32:35+00:00","mainEntityOfPage":{"@id":"https:\/\/www.nae.fr\/2025\/05\/05\/a-deep-trench-type-sic-mosfet-integrated-with-schottky-diode-for-enhanced-oxide-reliability-and-switching-performances\/"},"wordCount":176,"commentCount":0,"publisher":{"@id":"https:\/\/www.nae.fr\/#organization"},"image":{"@id":"https:\/\/www.nae.fr\/2025\/05\/05\/a-deep-trench-type-sic-mosfet-integrated-with-schottky-diode-for-enhanced-oxide-reliability-and-switching-performances\/#primaryimage"},"thumbnailUrl":"https:\/\/www.nae.fr\/wp-content\/uploads\/2026\/06\/logo-scopus-200.png","keywords":["Actualit\u00e9s","Electrification et fiabilit\u00e9 des syst\u00e8mes embarqu\u00e9s","Fiabilit\u00e9 des syst\u00e8mes et des composants"],"articleSection":["Innovation et technologique","RTI"],"inLanguage":"en-US","potentialAction":[{"@type":"CommentAction","name":"Comment","target":["https:\/\/www.nae.fr\/2025\/05\/05\/a-deep-trench-type-sic-mosfet-integrated-with-schottky-diode-for-enhanced-oxide-reliability-and-switching-performances\/#respond"]}]},{"@type":"WebPage","@id":"https:\/\/www.nae.fr\/2025\/05\/05\/a-deep-trench-type-sic-mosfet-integrated-with-schottky-diode-for-enhanced-oxide-reliability-and-switching-performances\/","url":"https:\/\/www.nae.fr\/2025\/05\/05\/a-deep-trench-type-sic-mosfet-integrated-with-schottky-diode-for-enhanced-oxide-reliability-and-switching-performances\/","name":"A deep trench-type SiC MOSFET integrated with Schottky diode for enhanced oxide reliability and switching performances | Ton Site","isPartOf":{"@id":"https:\/\/www.nae.fr\/#website"},"primaryImageOfPage":{"@id":"https:\/\/www.nae.fr\/2025\/05\/05\/a-deep-trench-type-sic-mosfet-integrated-with-schottky-diode-for-enhanced-oxide-reliability-and-switching-performances\/#primaryimage"},"image":{"@id":"https:\/\/www.nae.fr\/2025\/05\/05\/a-deep-trench-type-sic-mosfet-integrated-with-schottky-diode-for-enhanced-oxide-reliability-and-switching-performances\/#primaryimage"},"thumbnailUrl":"https:\/\/www.nae.fr\/wp-content\/uploads\/2026\/06\/logo-scopus-200.png","datePublished":"2025-05-05T06:32:35+00:00","breadcrumb":{"@id":"https:\/\/www.nae.fr\/2025\/05\/05\/a-deep-trench-type-sic-mosfet-integrated-with-schottky-diode-for-enhanced-oxide-reliability-and-switching-performances\/#breadcrumb"},"inLanguage":"en-US","potentialAction":[{"@type":"ReadAction","target":["https:\/\/www.nae.fr\/2025\/05\/05\/a-deep-trench-type-sic-mosfet-integrated-with-schottky-diode-for-enhanced-oxide-reliability-and-switching-performances\/"]}]},{"@type":"ImageObject","inLanguage":"en-US","@id":"https:\/\/www.nae.fr\/2025\/05\/05\/a-deep-trench-type-sic-mosfet-integrated-with-schottky-diode-for-enhanced-oxide-reliability-and-switching-performances\/#primaryimage","url":"https:\/\/www.nae.fr\/wp-content\/uploads\/2026\/06\/logo-scopus-200.png","contentUrl":"https:\/\/www.nae.fr\/wp-content\/uploads\/2026\/06\/logo-scopus-200.png","width":232,"height":200},{"@type":"BreadcrumbList","@id":"https:\/\/www.nae.fr\/2025\/05\/05\/a-deep-trench-type-sic-mosfet-integrated-with-schottky-diode-for-enhanced-oxide-reliability-and-switching-performances\/#breadcrumb","itemListElement":[{"@type":"ListItem","position":1,"name":"Accueil","item":"https:\/\/www.nae.fr\/"},{"@type":"ListItem","position":2,"name":"A deep trench-type SiC MOSFET integrated with Schottky diode for enhanced oxide reliability and switching performances"}]},{"@type":"WebSite","@id":"https:\/\/www.nae.fr\/#website","url":"https:\/\/www.nae.fr\/","name":"NAE","description":"NAE fili\u00e8re d&#039;excellence...","publisher":{"@id":"https:\/\/www.nae.fr\/#organization"},"potentialAction":[{"@type":"SearchAction","target":{"@type":"EntryPoint","urlTemplate":"https:\/\/www.nae.fr\/?s={search_term_string}"},"query-input":{"@type":"PropertyValueSpecification","valueRequired":true,"valueName":"search_term_string"}}],"inLanguage":"en-US"},{"@type":"Organization","@id":"https:\/\/www.nae.fr\/#organization","name":"NAE","url":"https:\/\/www.nae.fr\/","logo":{"@type":"ImageObject","inLanguage":"en-US","@id":"https:\/\/www.nae.fr\/#\/schema\/logo\/image\/","url":"https:\/\/www.nae.fr\/wp-content\/uploads\/2025\/10\/nae-logo.svg","contentUrl":"https:\/\/www.nae.fr\/wp-content\/uploads\/2025\/10\/nae-logo.svg","width":84,"height":52,"caption":"NAE"},"image":{"@id":"https:\/\/www.nae.fr\/#\/schema\/logo\/image\/"}},{"@type":"Person","@id":"https:\/\/www.nae.fr\/#\/schema\/person\/3d658e930f01449b7195ce4a78fcfc1e","name":"adminwa","image":{"@type":"ImageObject","inLanguage":"en-US","@id":"https:\/\/secure.gravatar.com\/avatar\/5118570d863e9bebccd6a13a0e571e5515c30a2f455e20ed92788cb2b4e5c631?s=96&d=mm&r=g","url":"https:\/\/secure.gravatar.com\/avatar\/5118570d863e9bebccd6a13a0e571e5515c30a2f455e20ed92788cb2b4e5c631?s=96&d=mm&r=g","contentUrl":"https:\/\/secure.gravatar.com\/avatar\/5118570d863e9bebccd6a13a0e571e5515c30a2f455e20ed92788cb2b4e5c631?s=96&d=mm&r=g","caption":"adminwa"},"sameAs":["https:\/\/www.nae.fr"],"url":"https:\/\/www.nae.fr\/en\/author\/adminwa\/"}]}},"_links":{"self":[{"href":"https:\/\/www.nae.fr\/en\/wp-json\/wp\/v2\/posts\/55447","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.nae.fr\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.nae.fr\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.nae.fr\/en\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/www.nae.fr\/en\/wp-json\/wp\/v2\/comments?post=55447"}],"version-history":[{"count":0,"href":"https:\/\/www.nae.fr\/en\/wp-json\/wp\/v2\/posts\/55447\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.nae.fr\/en\/wp-json\/wp\/v2\/media\/54431"}],"wp:attachment":[{"href":"https:\/\/www.nae.fr\/en\/wp-json\/wp\/v2\/media?parent=55447"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.nae.fr\/en\/wp-json\/wp\/v2\/categories?post=55447"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.nae.fr\/en\/wp-json\/wp\/v2\/tags?post=55447"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}