{"id":56631,"date":"2026-01-19T10:32:12","date_gmt":"2026-01-19T09:32:12","guid":{"rendered":"https:\/\/www.nae.fr\/2026\/01\/19\/robust-c-v-ratio-technique-for-profiling-defects-in-proton-irradiated-4h-sic\/"},"modified":"2026-01-19T10:32:12","modified_gmt":"2026-01-19T09:32:12","slug":"robust-c-v-ratio-technique-for-profiling-defects-in-proton-irradiated-4h-sic","status":"publish","type":"post","link":"https:\/\/www.nae.fr\/en\/2026\/01\/19\/robust-c-v-ratio-technique-for-profiling-defects-in-proton-irradiated-4h-sic\/","title":{"rendered":"Robust C\u2013V Ratio Technique for Profiling Defects in Proton-Irradiated 4H-SiC"},"content":{"rendered":"
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\n\nSilicon carbide (SiC) power devices possess exceptional electrical and thermal properties, making them strong candidates for deployment in extreme environments such as space. However, displacement damage induced by high-energy particles remains a critical factor that can compromise long-term reliability, underscoring the need for accurate defect characterization. Conventional C\u2013V doping-profile extraction uses numerical differentiation, which amplifies measurement noise and reduces accuracy and reproducibility. We present an analytical model that removes numerical differentiation by using the ratio of C\u2013V characteristics measured before and after irradiation. This approach enables direct, stable, quantitative extraction of net radiation-induced trap density.\n\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div><\/blockquote>\n
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\n\nPour en savoir plus : Robust C\u2013V Ratio Technique for Profiling Defects in Proton-Irradiated 4H-SiC<\/a>\n\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>","protected":false},"excerpt":{"rendered":"

Silicon carbide (SiC) power devices possess exceptional electrical and thermal properties, making them strong candidates for deployment in extreme environments such as space. However, displacement damage induced by high-energy particles remains a critical factor that can compromise long-term reliability, underscoring the need for accurate defect characterization. Conventional C\u2013V doping-profile extraction uses numerical differentiation, which amplifies […]<\/p>\n","protected":false},"author":1,"featured_media":56632,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[34,16],"tags":[35,45,30],"class_list":["post-56631","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-innovation-et-technologique","category-rti","tag-actualites","tag-electrification-et-fiabilite-des-systemes-embarques","tag-fiabilite-des-systemes-et-des-composants"],"acf":[],"yoast_head":"\nRobust C\u2013V Ratio Technique for Profiling Defects in Proton-Irradiated 4H-SiC | Ton Site<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.nae.fr\/en\/2026\/01\/19\/robust-c-v-ratio-technique-for-profiling-defects-in-proton-irradiated-4h-sic\/\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Robust C\u2013V Ratio Technique for Profiling Defects in Proton-Irradiated 4H-SiC | Ton Site\" \/>\n<meta property=\"og:description\" content=\"Silicon carbide (SiC) power devices possess exceptional electrical and thermal properties, making them strong candidates for deployment in extreme environments such as space. However, displacement damage induced by high-energy particles remains a critical factor that can compromise long-term reliability, underscoring the need for accurate defect characterization. Conventional C\u2013V doping-profile extraction uses numerical differentiation, which amplifies […]\" \/>\n<meta property=\"og:url\" content=\"https:\/\/www.nae.fr\/en\/2026\/01\/19\/robust-c-v-ratio-technique-for-profiling-defects-in-proton-irradiated-4h-sic\/\" \/>\n<meta property=\"og:site_name\" content=\"NAE\" \/>\n<meta property=\"article:published_time\" content=\"2026-01-19T09:32:12+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/www.nae.fr\/wp-content\/uploads\/2026\/06\/Logo-wiley-advanced.png\" \/>\n\t<meta property=\"og:image:width\" content=\"200\" \/>\n\t<meta property=\"og:image:height\" content=\"200\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/png\" \/>\n<meta name=\"author\" content=\"adminwa\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:label1\" content=\"Written by\" \/>\n\t<meta name=\"twitter:data1\" content=\"adminwa\" \/>\n\t<meta name=\"twitter:label2\" content=\"Est. reading time\" 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