{"id":57535,"date":"2026-04-20T08:30:22","date_gmt":"2026-04-20T06:30:22","guid":{"rendered":"https:\/\/www.nae.fr\/2026\/04\/20\/ganret-un-premier-projet-pour-permettre-lintegration-massive-de-lelectronique-de-puissance-basee-sur-le-gan\/"},"modified":"2026-04-20T08:30:22","modified_gmt":"2026-04-20T06:30:22","slug":"ganret-un-premier-projet-pour-permettre-lintegration-massive-de-lelectronique-de-puissance-basee-sur-le-gan","status":"publish","type":"post","link":"https:\/\/www.nae.fr\/en\/2026\/04\/20\/ganret-un-premier-projet-pour-permettre-lintegration-massive-de-lelectronique-de-puissance-basee-sur-le-gan\/","title":{"rendered":"GANRET : un premier projet pour permettre l\u2019int\u00e9gration massive de l\u2019\u00e9lectronique de puissance bas\u00e9e sur le GaN"},"content":{"rendered":"
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L\u2019industrie a\u00e9rospatiale s\u2019engage de plus en plus dans la transition vers des syst\u00e8mes \u00e9lectriques dans le but de r\u00e9duire les \u00e9missions et d\u2019optimiser l\u2019efficacit\u00e9.<\/p>\n

Dans ce contexte et face \u00e0 ces exigences, les transistors de puissance \u00e0 base de nitrure de gallium (GaN) apparaissent comme les meilleurs candidats pour relever ces d\u00e9fis exigeants impos\u00e9s par l\u2019industrie du transport. Ils se distinguent notamment par leur tension de claquage elev\u00e9, leur vitesse de commutation, et leurs faibles pertes, permettant ainsi d\u2019atteindre une densit\u00e9 de puissance \u00e9lev\u00e9e et un haut rendement \u00e9nerg\u00e9tique. C\u2019est dans ce contexte que l\u2019IRT Saint Exup\u00e9ry a men\u00e9 le projet GANRET jusqu\u2019\u00e0 la fin d\u2019ann\u00e9e 2025.<\/p>\n\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div><\/blockquote>\n

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\n\nPour en savoir plus : GANRET : un premier projet pour permettre l\u2019int\u00e9gration massive de l\u2019\u00e9lectronique de puissance bas\u00e9e sur le GaN<\/a>\n\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>","protected":false},"excerpt":{"rendered":"

L\u2019industrie a\u00e9rospatiale s\u2019engage de plus en plus dans la transition vers des syst\u00e8mes \u00e9lectriques dans le but de r\u00e9duire les \u00e9missions et d\u2019optimiser l\u2019efficacit\u00e9. Dans ce contexte et face \u00e0 ces exigences, les transistors de puissance \u00e0 base de nitrure de gallium (GaN) apparaissent comme les meilleurs candidats pour relever ces d\u00e9fis exigeants impos\u00e9s par […]<\/p>\n","protected":false},"author":1,"featured_media":57536,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[20,34,16],"tags":[35,45,30],"class_list":["post-57535","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-actualite-aeronautique","category-innovation-et-technologique","category-rti","tag-actualites","tag-electrification-et-fiabilite-des-systemes-embarques","tag-fiabilite-des-systemes-et-des-composants"],"acf":[],"yoast_head":"\nGANRET : un premier projet pour permettre l\u2019int\u00e9gration massive de l\u2019\u00e9lectronique de puissance bas\u00e9e sur le GaN - NAE<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.nae.fr\/en\/2026\/04\/20\/ganret-un-premier-projet-pour-permettre-lintegration-massive-de-lelectronique-de-puissance-basee-sur-le-gan\/\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"GANRET : un premier projet pour permettre l\u2019int\u00e9gration massive de l\u2019\u00e9lectronique de puissance bas\u00e9e sur le GaN - NAE\" \/>\n<meta property=\"og:description\" content=\"L\u2019industrie a\u00e9rospatiale s\u2019engage de plus en plus dans la transition vers des syst\u00e8mes \u00e9lectriques dans le but de r\u00e9duire les \u00e9missions et d\u2019optimiser l\u2019efficacit\u00e9. Dans ce contexte et face \u00e0 ces exigences, les transistors de puissance \u00e0 base de nitrure de gallium (GaN) apparaissent comme les meilleurs candidats pour relever ces d\u00e9fis exigeants impos\u00e9s par […]\" \/>\n<meta property=\"og:url\" content=\"https:\/\/www.nae.fr\/en\/2026\/04\/20\/ganret-un-premier-projet-pour-permettre-lintegration-massive-de-lelectronique-de-puissance-basee-sur-le-gan\/\" \/>\n<meta property=\"og:site_name\" content=\"NAE\" \/>\n<meta property=\"article:published_time\" content=\"2026-04-20T06:30:22+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/www.nae.fr\/wp-content\/uploads\/2026\/06\/Posts-site-web-40.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"960\" \/>\n\t<meta property=\"og:image:height\" content=\"540\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"author\" content=\"adminwa\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:label1\" content=\"Written by\" \/>\n\t<meta name=\"twitter:data1\" content=\"adminwa\" \/>\n\t<meta name=\"twitter:label2\" content=\"Est. reading time\" \/>\n\t<meta name=\"twitter:data2\" content=\"1 minute\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\\\/\\\/schema.org\",\"@graph\":[{\"@type\":\"Article\",\"@id\":\"https:\\\/\\\/www.nae.fr\\\/2026\\\/04\\\/20\\\/ganret-un-premier-projet-pour-permettre-lintegration-massive-de-lelectronique-de-puissance-basee-sur-le-gan\\\/#article\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/www.nae.fr\\\/2026\\\/04\\\/20\\\/ganret-un-premier-projet-pour-permettre-lintegration-massive-de-lelectronique-de-puissance-basee-sur-le-gan\\\/\"},\"author\":{\"name\":\"adminwa\",\"@id\":\"https:\\\/\\\/www.nae.fr\\\/#\\\/schema\\\/person\\\/3d658e930f01449b7195ce4a78fcfc1e\"},\"headline\":\"GANRET : un premier projet pour permettre l\u2019int\u00e9gration massive de l\u2019\u00e9lectronique de puissance bas\u00e9e sur le GaN\",\"datePublished\":\"2026-04-20T06:30:22+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\\\/\\\/www.nae.fr\\\/2026\\\/04\\\/20\\\/ganret-un-premier-projet-pour-permettre-lintegration-massive-de-lelectronique-de-puissance-basee-sur-le-gan\\\/\"},\"wordCount\":166,\"commentCount\":0,\"publisher\":{\"@id\":\"https:\\\/\\\/www.nae.fr\\\/#organization\"},\"image\":{\"@id\":\"https:\\\/\\\/www.nae.fr\\\/2026\\\/04\\\/20\\\/ganret-un-premier-projet-pour-permettre-lintegration-massive-de-lelectronique-de-puissance-basee-sur-le-gan\\\/#primaryimage\"},\"thumbnailUrl\":\"https:\\\/\\\/www.nae.fr\\\/wp-content\\\/uploads\\\/2026\\\/06\\\/Posts-site-web-40.jpg\",\"keywords\":[\"Actualit\u00e9s\",\"Electrification et fiabilit\u00e9 des syst\u00e8mes embarqu\u00e9s\",\"Fiabilit\u00e9 des syst\u00e8mes et des composants\"],\"articleSection\":[\"Actualit\u00e9 A\u00e9ronautique\",\"Innovation et technologique\",\"RTI\"],\"inLanguage\":\"en-US\",\"potentialAction\":[{\"@type\":\"CommentAction\",\"name\":\"Comment\",\"target\":[\"https:\\\/\\\/www.nae.fr\\\/2026\\\/04\\\/20\\\/ganret-un-premier-projet-pour-permettre-lintegration-massive-de-lelectronique-de-puissance-basee-sur-le-gan\\\/#respond\"]}]},{\"@type\":\"WebPage\",\"@id\":\"https:\\\/\\\/www.nae.fr\\\/2026\\\/04\\\/20\\\/ganret-un-premier-projet-pour-permettre-lintegration-massive-de-lelectronique-de-puissance-basee-sur-le-gan\\\/\",\"url\":\"https:\\\/\\\/www.nae.fr\\\/2026\\\/04\\\/20\\\/ganret-un-premier-projet-pour-permettre-lintegration-massive-de-lelectronique-de-puissance-basee-sur-le-gan\\\/\",\"name\":\"GANRET : un premier projet pour permettre l\u2019int\u00e9gration massive de l\u2019\u00e9lectronique de puissance bas\u00e9e sur le GaN - 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