{"id":57727,"date":"2026-05-11T08:49:41","date_gmt":"2026-05-11T06:49:41","guid":{"rendered":"https:\/\/www.nae.fr\/2026\/05\/11\/a-comparative-review-of-junction-temperature-monitoring-for-sic-based-power-semiconductor-devices\/"},"modified":"2026-05-11T08:49:41","modified_gmt":"2026-05-11T06:49:41","slug":"a-comparative-review-of-junction-temperature-monitoring-for-sic-based-power-semiconductor-devices","status":"publish","type":"post","link":"https:\/\/www.nae.fr\/en\/2026\/05\/11\/a-comparative-review-of-junction-temperature-monitoring-for-sic-based-power-semiconductor-devices\/","title":{"rendered":"A Comparative Review of Junction Temperature Monitoring for SiC-Based Power Semiconductor Devices"},"content":{"rendered":"
\n
\n\nSilicon carbide power devices, representing thirdgeneration semiconductors, are widely used in the areas of industrial control, rail transportation, electric vehicles, and renewable energy. As crucial components of power electronic systems, their reliability is vital to the safe operation of entire systems. Temperature is a critical factor affecting device reliability, and junction temperature serves as a key indicator reflecting the thermal state of the device. Accurate monitoring of junction temperature is therefore essential for tracking device conditions and assessing reliability. This paper provides a comparative review of advances in junction temperature monitoring for silicon carbide-based power devices, systematically analyzing four primary methods: thermal network model, temperature-sensitive electrical parameter, physical contact sensing, and non-contact optical methods.\n\n<\/div><\/blockquote>\nPour en savoir plus :A Comparative Review of Junction Temperature Monitoring for SiC-Based Power Semiconductor Devices<\/a>","protected":false},"excerpt":{"rendered":"

Silicon carbide power devices, representing thirdgeneration semiconductors, are widely used in the areas of industrial control, rail transportation, electric vehicles, and renewable energy. As crucial components of power electronic systems, their reliability is vital to the safe operation of entire systems. Temperature is a critical factor affecting device reliability, and junction temperature serves as a […]<\/p>\n","protected":false},"author":1,"featured_media":54850,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[34,16],"tags":[35,45,30],"class_list":["post-57727","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-innovation-et-technologique","category-rti","tag-actualites","tag-electrification-et-fiabilite-des-systemes-embarques","tag-fiabilite-des-systemes-et-des-composants"],"acf":[],"yoast_head":"\nA Comparative Review of Junction Temperature Monitoring for SiC-Based Power Semiconductor Devices - NAE<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.nae.fr\/en\/2026\/05\/11\/a-comparative-review-of-junction-temperature-monitoring-for-sic-based-power-semiconductor-devices\/\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"A Comparative Review of Junction Temperature Monitoring for SiC-Based Power Semiconductor Devices - NAE\" \/>\n<meta property=\"og:description\" content=\"Silicon carbide power devices, representing thirdgeneration semiconductors, are widely used in the areas of industrial control, rail transportation, electric vehicles, and renewable energy. As crucial components of power electronic systems, their reliability is vital to the safe operation of entire systems. Temperature is a critical factor affecting device reliability, and junction temperature serves as a […]\" \/>\n<meta property=\"og:url\" content=\"https:\/\/www.nae.fr\/en\/2026\/05\/11\/a-comparative-review-of-junction-temperature-monitoring-for-sic-based-power-semiconductor-devices\/\" \/>\n<meta property=\"og:site_name\" content=\"NAE\" \/>\n<meta property=\"article:published_time\" content=\"2026-05-11T06:49:41+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/www.nae.fr\/wp-content\/uploads\/2026\/06\/logo-IEEE-Xplore-1.png\" \/>\n\t<meta property=\"og:image:width\" content=\"223\" \/>\n\t<meta property=\"og:image:height\" content=\"200\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/png\" \/>\n<meta name=\"author\" content=\"adminwa\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:label1\" content=\"Written by\" \/>\n\t<meta name=\"twitter:data1\" content=\"adminwa\" \/>\n\t<meta name=\"twitter:label2\" content=\"Est. reading time\" \/>\n\t<meta name=\"twitter:data2\" content=\"1 minute\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\\\/\\\/schema.org\",\"@graph\":[{\"@type\":\"Article\",\"@id\":\"https:\\\/\\\/www.nae.fr\\\/2026\\\/05\\\/11\\\/a-comparative-review-of-junction-temperature-monitoring-for-sic-based-power-semiconductor-devices\\\/#article\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/www.nae.fr\\\/2026\\\/05\\\/11\\\/a-comparative-review-of-junction-temperature-monitoring-for-sic-based-power-semiconductor-devices\\\/\"},\"author\":{\"name\":\"adminwa\",\"@id\":\"https:\\\/\\\/www.nae.fr\\\/#\\\/schema\\\/person\\\/3d658e930f01449b7195ce4a78fcfc1e\"},\"headline\":\"A Comparative Review of Junction Temperature Monitoring for SiC-Based Power Semiconductor Devices\",\"datePublished\":\"2026-05-11T06:49:41+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\\\/\\\/www.nae.fr\\\/2026\\\/05\\\/11\\\/a-comparative-review-of-junction-temperature-monitoring-for-sic-based-power-semiconductor-devices\\\/\"},\"wordCount\":142,\"commentCount\":0,\"publisher\":{\"@id\":\"https:\\\/\\\/www.nae.fr\\\/#organization\"},\"image\":{\"@id\":\"https:\\\/\\\/www.nae.fr\\\/2026\\\/05\\\/11\\\/a-comparative-review-of-junction-temperature-monitoring-for-sic-based-power-semiconductor-devices\\\/#primaryimage\"},\"thumbnailUrl\":\"https:\\\/\\\/www.nae.fr\\\/wp-content\\\/uploads\\\/2026\\\/06\\\/logo-IEEE-Xplore-1.png\",\"keywords\":[\"Actualit\u00e9s\",\"Electrification et fiabilit\u00e9 des syst\u00e8mes embarqu\u00e9s\",\"Fiabilit\u00e9 des syst\u00e8mes et des composants\"],\"articleSection\":[\"Innovation et technologique\",\"RTI\"],\"inLanguage\":\"en-US\",\"potentialAction\":[{\"@type\":\"CommentAction\",\"name\":\"Comment\",\"target\":[\"https:\\\/\\\/www.nae.fr\\\/2026\\\/05\\\/11\\\/a-comparative-review-of-junction-temperature-monitoring-for-sic-based-power-semiconductor-devices\\\/#respond\"]}]},{\"@type\":\"WebPage\",\"@id\":\"https:\\\/\\\/www.nae.fr\\\/2026\\\/05\\\/11\\\/a-comparative-review-of-junction-temperature-monitoring-for-sic-based-power-semiconductor-devices\\\/\",\"url\":\"https:\\\/\\\/www.nae.fr\\\/2026\\\/05\\\/11\\\/a-comparative-review-of-junction-temperature-monitoring-for-sic-based-power-semiconductor-devices\\\/\",\"name\":\"A Comparative Review of Junction Temperature Monitoring for SiC-Based Power Semiconductor Devices - NAE\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/www.nae.fr\\\/#website\"},\"primaryImageOfPage\":{\"@id\":\"https:\\\/\\\/www.nae.fr\\\/2026\\\/05\\\/11\\\/a-comparative-review-of-junction-temperature-monitoring-for-sic-based-power-semiconductor-devices\\\/#primaryimage\"},\"image\":{\"@id\":\"https:\\\/\\\/www.nae.fr\\\/2026\\\/05\\\/11\\\/a-comparative-review-of-junction-temperature-monitoring-for-sic-based-power-semiconductor-devices\\\/#primaryimage\"},\"thumbnailUrl\":\"https:\\\/\\\/www.nae.fr\\\/wp-content\\\/uploads\\\/2026\\\/06\\\/logo-IEEE-Xplore-1.png\",\"datePublished\":\"2026-05-11T06:49:41+00:00\",\"breadcrumb\":{\"@id\":\"https:\\\/\\\/www.nae.fr\\\/2026\\\/05\\\/11\\\/a-comparative-review-of-junction-temperature-monitoring-for-sic-based-power-semiconductor-devices\\\/#breadcrumb\"},\"inLanguage\":\"en-US\",\"potentialAction\":[{\"@type\":\"ReadAction\",\"target\":[\"https:\\\/\\\/www.nae.fr\\\/2026\\\/05\\\/11\\\/a-comparative-review-of-junction-temperature-monitoring-for-sic-based-power-semiconductor-devices\\\/\"]}]},{\"@type\":\"ImageObject\",\"inLanguage\":\"en-US\",\"@id\":\"https:\\\/\\\/www.nae.fr\\\/2026\\\/05\\\/11\\\/a-comparative-review-of-junction-temperature-monitoring-for-sic-based-power-semiconductor-devices\\\/#primaryimage\",\"url\":\"https:\\\/\\\/www.nae.fr\\\/wp-content\\\/uploads\\\/2026\\\/06\\\/logo-IEEE-Xplore-1.png\",\"contentUrl\":\"https:\\\/\\\/www.nae.fr\\\/wp-content\\\/uploads\\\/2026\\\/06\\\/logo-IEEE-Xplore-1.png\",\"width\":223,\"height\":200},{\"@type\":\"BreadcrumbList\",\"@id\":\"https:\\\/\\\/www.nae.fr\\\/2026\\\/05\\\/11\\\/a-comparative-review-of-junction-temperature-monitoring-for-sic-based-power-semiconductor-devices\\\/#breadcrumb\",\"itemListElement\":[{\"@type\":\"ListItem\",\"position\":1,\"name\":\"Accueil\",\"item\":\"https:\\\/\\\/www.nae.fr\\\/\"},{\"@type\":\"ListItem\",\"position\":2,\"name\":\"A Comparative Review of Junction Temperature Monitoring for SiC-Based Power Semiconductor Devices\"}]},{\"@type\":\"WebSite\",\"@id\":\"https:\\\/\\\/www.nae.fr\\\/#website\",\"url\":\"https:\\\/\\\/www.nae.fr\\\/\",\"name\":\"NAE\",\"description\":\"NAE fili\u00e8re d'excellence...\",\"publisher\":{\"@id\":\"https:\\\/\\\/www.nae.fr\\\/#organization\"},\"potentialAction\":[{\"@type\":\"SearchAction\",\"target\":{\"@type\":\"EntryPoint\",\"urlTemplate\":\"https:\\\/\\\/www.nae.fr\\\/?s={search_term_string}\"},\"query-input\":{\"@type\":\"PropertyValueSpecification\",\"valueRequired\":true,\"valueName\":\"search_term_string\"}}],\"inLanguage\":\"en-US\"},{\"@type\":\"Organization\",\"@id\":\"https:\\\/\\\/www.nae.fr\\\/#organization\",\"name\":\"NAE\",\"url\":\"https:\\\/\\\/www.nae.fr\\\/\",\"logo\":{\"@type\":\"ImageObject\",\"inLanguage\":\"en-US\",\"@id\":\"https:\\\/\\\/www.nae.fr\\\/#\\\/schema\\\/logo\\\/image\\\/\",\"url\":\"https:\\\/\\\/www.nae.fr\\\/wp-content\\\/uploads\\\/2025\\\/10\\\/nae-logo.svg\",\"contentUrl\":\"https:\\\/\\\/www.nae.fr\\\/wp-content\\\/uploads\\\/2025\\\/10\\\/nae-logo.svg\",\"width\":84,\"height\":52,\"caption\":\"NAE\"},\"image\":{\"@id\":\"https:\\\/\\\/www.nae.fr\\\/#\\\/schema\\\/logo\\\/image\\\/\"}},{\"@type\":\"Person\",\"@id\":\"https:\\\/\\\/www.nae.fr\\\/#\\\/schema\\\/person\\\/3d658e930f01449b7195ce4a78fcfc1e\",\"name\":\"adminwa\",\"image\":{\"@type\":\"ImageObject\",\"inLanguage\":\"en-US\",\"@id\":\"https:\\\/\\\/secure.gravatar.com\\\/avatar\\\/5118570d863e9bebccd6a13a0e571e5515c30a2f455e20ed92788cb2b4e5c631?s=96&d=mm&r=g\",\"url\":\"https:\\\/\\\/secure.gravatar.com\\\/avatar\\\/5118570d863e9bebccd6a13a0e571e5515c30a2f455e20ed92788cb2b4e5c631?s=96&d=mm&r=g\",\"contentUrl\":\"https:\\\/\\\/secure.gravatar.com\\\/avatar\\\/5118570d863e9bebccd6a13a0e571e5515c30a2f455e20ed92788cb2b4e5c631?s=96&d=mm&r=g\",\"caption\":\"adminwa\"},\"sameAs\":[\"https:\\\/\\\/www.nae.fr\"],\"url\":\"https:\\\/\\\/www.nae.fr\\\/en\\\/author\\\/adminwa\\\/\"}]}<\/script>\n<!-- \/ Yoast SEO plugin. -->","yoast_head_json":{"title":"A Comparative Review of Junction Temperature Monitoring for SiC-Based Power Semiconductor Devices - NAE","robots":{"index":"index","follow":"follow","max-snippet":"max-snippet:-1","max-image-preview":"max-image-preview:large","max-video-preview":"max-video-preview:-1"},"canonical":"https:\/\/www.nae.fr\/en\/2026\/05\/11\/a-comparative-review-of-junction-temperature-monitoring-for-sic-based-power-semiconductor-devices\/","og_locale":"en_US","og_type":"article","og_title":"A Comparative Review of Junction Temperature Monitoring for SiC-Based Power Semiconductor Devices - NAE","og_description":"Silicon carbide power devices, representing thirdgeneration semiconductors, are widely used in the areas of industrial control, rail transportation, electric vehicles, and renewable energy. As crucial components of power electronic systems, their reliability is vital to the safe operation of entire systems. Temperature is a critical factor affecting device reliability, and junction temperature serves as a […]","og_url":"https:\/\/www.nae.fr\/en\/2026\/05\/11\/a-comparative-review-of-junction-temperature-monitoring-for-sic-based-power-semiconductor-devices\/","og_site_name":"NAE","article_published_time":"2026-05-11T06:49:41+00:00","og_image":[{"width":223,"height":200,"url":"https:\/\/www.nae.fr\/wp-content\/uploads\/2026\/06\/logo-IEEE-Xplore-1.png","type":"image\/png"}],"author":"adminwa","twitter_card":"summary_large_image","twitter_misc":{"Written by":"adminwa","Est. reading time":"1 minute"},"schema":{"@context":"https:\/\/schema.org","@graph":[{"@type":"Article","@id":"https:\/\/www.nae.fr\/2026\/05\/11\/a-comparative-review-of-junction-temperature-monitoring-for-sic-based-power-semiconductor-devices\/#article","isPartOf":{"@id":"https:\/\/www.nae.fr\/2026\/05\/11\/a-comparative-review-of-junction-temperature-monitoring-for-sic-based-power-semiconductor-devices\/"},"author":{"name":"adminwa","@id":"https:\/\/www.nae.fr\/#\/schema\/person\/3d658e930f01449b7195ce4a78fcfc1e"},"headline":"A Comparative Review of Junction Temperature Monitoring for SiC-Based Power Semiconductor Devices","datePublished":"2026-05-11T06:49:41+00:00","mainEntityOfPage":{"@id":"https:\/\/www.nae.fr\/2026\/05\/11\/a-comparative-review-of-junction-temperature-monitoring-for-sic-based-power-semiconductor-devices\/"},"wordCount":142,"commentCount":0,"publisher":{"@id":"https:\/\/www.nae.fr\/#organization"},"image":{"@id":"https:\/\/www.nae.fr\/2026\/05\/11\/a-comparative-review-of-junction-temperature-monitoring-for-sic-based-power-semiconductor-devices\/#primaryimage"},"thumbnailUrl":"https:\/\/www.nae.fr\/wp-content\/uploads\/2026\/06\/logo-IEEE-Xplore-1.png","keywords":["Actualit\u00e9s","Electrification et fiabilit\u00e9 des syst\u00e8mes embarqu\u00e9s","Fiabilit\u00e9 des syst\u00e8mes et des composants"],"articleSection":["Innovation et technologique","RTI"],"inLanguage":"en-US","potentialAction":[{"@type":"CommentAction","name":"Comment","target":["https:\/\/www.nae.fr\/2026\/05\/11\/a-comparative-review-of-junction-temperature-monitoring-for-sic-based-power-semiconductor-devices\/#respond"]}]},{"@type":"WebPage","@id":"https:\/\/www.nae.fr\/2026\/05\/11\/a-comparative-review-of-junction-temperature-monitoring-for-sic-based-power-semiconductor-devices\/","url":"https:\/\/www.nae.fr\/2026\/05\/11\/a-comparative-review-of-junction-temperature-monitoring-for-sic-based-power-semiconductor-devices\/","name":"A Comparative Review of Junction Temperature Monitoring for SiC-Based Power Semiconductor Devices - NAE","isPartOf":{"@id":"https:\/\/www.nae.fr\/#website"},"primaryImageOfPage":{"@id":"https:\/\/www.nae.fr\/2026\/05\/11\/a-comparative-review-of-junction-temperature-monitoring-for-sic-based-power-semiconductor-devices\/#primaryimage"},"image":{"@id":"https:\/\/www.nae.fr\/2026\/05\/11\/a-comparative-review-of-junction-temperature-monitoring-for-sic-based-power-semiconductor-devices\/#primaryimage"},"thumbnailUrl":"https:\/\/www.nae.fr\/wp-content\/uploads\/2026\/06\/logo-IEEE-Xplore-1.png","datePublished":"2026-05-11T06:49:41+00:00","breadcrumb":{"@id":"https:\/\/www.nae.fr\/2026\/05\/11\/a-comparative-review-of-junction-temperature-monitoring-for-sic-based-power-semiconductor-devices\/#breadcrumb"},"inLanguage":"en-US","potentialAction":[{"@type":"ReadAction","target":["https:\/\/www.nae.fr\/2026\/05\/11\/a-comparative-review-of-junction-temperature-monitoring-for-sic-based-power-semiconductor-devices\/"]}]},{"@type":"ImageObject","inLanguage":"en-US","@id":"https:\/\/www.nae.fr\/2026\/05\/11\/a-comparative-review-of-junction-temperature-monitoring-for-sic-based-power-semiconductor-devices\/#primaryimage","url":"https:\/\/www.nae.fr\/wp-content\/uploads\/2026\/06\/logo-IEEE-Xplore-1.png","contentUrl":"https:\/\/www.nae.fr\/wp-content\/uploads\/2026\/06\/logo-IEEE-Xplore-1.png","width":223,"height":200},{"@type":"BreadcrumbList","@id":"https:\/\/www.nae.fr\/2026\/05\/11\/a-comparative-review-of-junction-temperature-monitoring-for-sic-based-power-semiconductor-devices\/#breadcrumb","itemListElement":[{"@type":"ListItem","position":1,"name":"Accueil","item":"https:\/\/www.nae.fr\/"},{"@type":"ListItem","position":2,"name":"A Comparative Review of Junction Temperature Monitoring for SiC-Based Power Semiconductor Devices"}]},{"@type":"WebSite","@id":"https:\/\/www.nae.fr\/#website","url":"https:\/\/www.nae.fr\/","name":"NAE","description":"NAE fili\u00e8re d'excellence...","publisher":{"@id":"https:\/\/www.nae.fr\/#organization"},"potentialAction":[{"@type":"SearchAction","target":{"@type":"EntryPoint","urlTemplate":"https:\/\/www.nae.fr\/?s={search_term_string}"},"query-input":{"@type":"PropertyValueSpecification","valueRequired":true,"valueName":"search_term_string"}}],"inLanguage":"en-US"},{"@type":"Organization","@id":"https:\/\/www.nae.fr\/#organization","name":"NAE","url":"https:\/\/www.nae.fr\/","logo":{"@type":"ImageObject","inLanguage":"en-US","@id":"https:\/\/www.nae.fr\/#\/schema\/logo\/image\/","url":"https:\/\/www.nae.fr\/wp-content\/uploads\/2025\/10\/nae-logo.svg","contentUrl":"https:\/\/www.nae.fr\/wp-content\/uploads\/2025\/10\/nae-logo.svg","width":84,"height":52,"caption":"NAE"},"image":{"@id":"https:\/\/www.nae.fr\/#\/schema\/logo\/image\/"}},{"@type":"Person","@id":"https:\/\/www.nae.fr\/#\/schema\/person\/3d658e930f01449b7195ce4a78fcfc1e","name":"adminwa","image":{"@type":"ImageObject","inLanguage":"en-US","@id":"https:\/\/secure.gravatar.com\/avatar\/5118570d863e9bebccd6a13a0e571e5515c30a2f455e20ed92788cb2b4e5c631?s=96&d=mm&r=g","url":"https:\/\/secure.gravatar.com\/avatar\/5118570d863e9bebccd6a13a0e571e5515c30a2f455e20ed92788cb2b4e5c631?s=96&d=mm&r=g","contentUrl":"https:\/\/secure.gravatar.com\/avatar\/5118570d863e9bebccd6a13a0e571e5515c30a2f455e20ed92788cb2b4e5c631?s=96&d=mm&r=g","caption":"adminwa"},"sameAs":["https:\/\/www.nae.fr"],"url":"https:\/\/www.nae.fr\/en\/author\/adminwa\/"}]}},"_links":{"self":[{"href":"https:\/\/www.nae.fr\/en\/wp-json\/wp\/v2\/posts\/57727","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.nae.fr\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.nae.fr\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.nae.fr\/en\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/www.nae.fr\/en\/wp-json\/wp\/v2\/comments?post=57727"}],"version-history":[{"count":0,"href":"https:\/\/www.nae.fr\/en\/wp-json\/wp\/v2\/posts\/57727\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.nae.fr\/en\/wp-json\/wp\/v2\/media\/54850"}],"wp:attachment":[{"href":"https:\/\/www.nae.fr\/en\/wp-json\/wp\/v2\/media?parent=57727"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.nae.fr\/en\/wp-json\/wp\/v2\/categories?post=57727"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.nae.fr\/en\/wp-json\/wp\/v2\/tags?post=57727"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}