{"id":57787,"date":"2026-05-18T09:09:30","date_gmt":"2026-05-18T07:09:30","guid":{"rendered":"https:\/\/www.nae.fr\/2026\/05\/18\/device-level-co-integration-of-direct-liquid-cooling-in-gan-on-sic-rf-hemts\/"},"modified":"2026-05-18T09:09:30","modified_gmt":"2026-05-18T07:09:30","slug":"device-level-co-integration-of-direct-liquid-cooling-in-gan-on-sic-rf-hemts","status":"publish","type":"post","link":"https:\/\/www.nae.fr\/en\/2026\/05\/18\/device-level-co-integration-of-direct-liquid-cooling-in-gan-on-sic-rf-hemts\/","title":{"rendered":"Device-level co-integration of direct liquid cooling in GaN-on-SiC RF HEMTs"},"content":{"rendered":"
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\n\nGallium nitride on silicon carbide high electron mobility transistors are key enabling devices for high power radio frequency systems. Their performance and reliability are increasingly constrained by self-heating under high power density operation. While silicon carbide substrates provide favorable thermal conductivity, continued scaling toward higher output power intensifies junction heating and exacerbates electro thermal coupling effects that degrade radio frequency performance. In parallel, stable operation at millimeter wave frequencies requires a grounding architecture with minimal parasitic inductance.\n\n<\/div>\n<\/div><\/blockquote>\nPour en savoir plus :\u00a0Device-level co-integration of direct liquid cooling in GaN-on-SiC RF HEMTs<\/a>","protected":false},"excerpt":{"rendered":"

Gallium nitride on silicon carbide high electron mobility transistors are key enabling devices for high power radio frequency systems. Their performance and reliability are increasingly constrained by self-heating under high power density operation. While silicon carbide substrates provide favorable thermal conductivity, continued scaling toward higher output power intensifies junction heating and exacerbates electro thermal coupling […]<\/p>\n","protected":false},"author":1,"featured_media":56547,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[34,16],"tags":[35,45,30],"class_list":["post-57787","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-innovation-et-technologique","category-rti","tag-actualites","tag-electrification-et-fiabilite-des-systemes-embarques","tag-fiabilite-des-systemes-et-des-composants"],"acf":[],"yoast_head":"\nDevice-level co-integration of direct liquid cooling in GaN-on-SiC RF HEMTs - NAE<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.nae.fr\/en\/2026\/05\/18\/device-level-co-integration-of-direct-liquid-cooling-in-gan-on-sic-rf-hemts\/\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Device-level co-integration of direct liquid cooling in GaN-on-SiC RF HEMTs - NAE\" \/>\n<meta property=\"og:description\" content=\"Gallium nitride on silicon carbide high electron mobility transistors are key enabling devices for high power radio frequency systems. 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