For various pulsed power electronics like, metal oxide semiconductor field-effect transistor (MOSFET), insulating gate bipolar transistor (IGBT), Gate turn-off thyristor (GTO), Integrated gate-commutated thyristor (IGCT), heat loads are often in the range of 10W/cm2 to more than 100W/cm2 for critical cases. The power spikes have to be thermally managed in order to avoid failure and ensure reliability. Most of the solutions consist in active heat sink dissipation that can achieve high heat transfer coefficie

Source : Integration of metallic phase change material in power electronics – IEEE Conference Publication