This study proposes a 300 W class Gallium Nitride (GaN) Solid-State Power Amplifier (SSPA)-based microwave plasma generator system for implementing next-generation light sources with high brightness and color rendering at 2.45 GHz. To overcome the lifetime limitations and control constraints of conventional magnetron systems, the proposed system introduces custom packaging technology utilizing GaN-on-SiC Bare-dies fabricated via the Win-semiconductor’s NP25 process. This approach minimizes parasitic components and significantly reduces thermal resistance compared to standard packages, ensuring reliability during high-power operation. A stable RF output of 300 W was achieved through two-stage power combining. For the plasma source, an Ar-InBr-Hg gas mixture was employed to optimize optical characteristics. This gas mixture is commonly used in electrodeless plasma lamps due to its high luminous efficacy and stable discharge characteristics.
