Researchers at Sandia National Laboratories and Auburn University in the US have developed a new method to more accurately detect atomic-scale defects in electronic materials, an advance that could be particularly useful for wide-bandgap (WBG) semiconductors such as SiC and GaN.
The study ‘The completed High-Low method for interface state analysis in MOS capacitors’, recently accepted for publication in the Journal of Applied Physics, addresses a longstanding challenge in understanding what happens at the critical boundary where a semiconductor meets an insulating layer.
