Gallium nitride on silicon carbide high electron mobility transistors are key enabling devices for high power radio frequency systems. Their performance and reliability are increasingly constrained by self-heating under high power density operation. While silicon carbide substrates provide favorable thermal conductivity, continued scaling toward higher output power intensifies junction heating and exacerbates electro thermal coupling effects that degrade radio frequency performance. In parallel, stable operation at millimeter wave frequencies requires a grounding architecture with minimal parasitic inductance.
