EPC releases eGaN Phase 18 reliability report

The report builds on previous work by closing the gap between lab-generated reliability testing and real-world device performance across mission profiles. It introduces new methodologies to better predict device lifetime under application-specific stress conditions, shaped through close collaboration with customers and supported by peer-reviewed research and international conference publications. The report emphasises the significance of comprehending the fundamental wear-out mechanisms in GaN HEMTs and presents a quantitative methodology for estimating the overall device lifetime based on the predominant stress conditions experienced during operation. The methodology allows for more accurate lifetime predictions across a wide range of applications by combining different stress factors, like voltage, current, temperature, and duty cycles.