With 5G-advanced, the data consumption between wireless equipment is predicted to follow exponential growth. To allow that, there is a need to increase the bandwidth with RF chips that fulfill 2 criteria: performance in the range of 24-100 GHz and affordability, for large scale deployment. Thanks to its remarkable properties, GaN is an ideal material that will deliver high power densities with high efficiency in the millimeter waves [1]. Two technologies coexist to answer these criteria: GaN-on-Silicon Carbide (SiC) and GaN-on-Silicon. GaN-on-SiC shows high performance [2], essentially because of the high thermal conductivity of SiC, however highly resistive SiC is expensive and the fabrication process of SiC generates 12 times more carbon emission than Si [3].
Pour en savoir plus : Production of mm-Wave epiwafers of GaN on Si grown by NH3-MBE
