The on-state resistance RDSON is a key aging indicator of silicon carbide MOSFETs power module. It can provide information on both chip and packaging degradation allowing more reliable power electronic converter. This on-state resistance can be determined using both the on-state current and voltage of the power semiconductor. This paper focuses on an on-state voltage measurement circuit for SiC MOSFET power module. In the literature, power module bondwires resistance cannot be measured due to high switching voltage oscillations. An on-state voltage measurement circuit that can withstand such oscillations is proposed. The proposed circuit is characterized using the ISO 5725 standard over a wide temperature range. Finally, the circuit is successfully tested on a double pulse bench for various module base plate temperatures and compared to data obtained with a static curve tracer Keysight B1505.
In-depth 2D FEM analysis of gate cracking in SiC MOSFETs under repetitive short-circuit conditions: Application of a damage-based model for crack length prediction [ESREF’25 Selected and Extended Full-Paper]
