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In semiconductor failure analysis (FA), investigations typically begin with techniques that preserve the integrity of the sample while allowing analysts to develop initial hypotheses. However, when non-destructive methods cannot resolve structural uncertainty or verify internal construction, destructive physical analysis (DPA) may be required.
Non-destructive approaches provide valuable information but do not always resolve the underlying problem. Internal interfaces may remain inaccessible, and competing failure hypotheses may not be distinguishable through indirect observation.