Atomera, a semiconductor materials and technology licensing company, has expanded its collaboration with EDA firm Synopsys to advance GaN device modelling for RF and power semiconductor applications.
The work builds on the companies’ long-standing relationship around Synopsys’ Sentaurus TCAD and Atomera’s MSTcad toolset and extends the collaboration into GaN workflows to support bringing higher-quality GaN solutions to market.
Atomera’s Mears Silicon Technology (MST) is a thin-film technology consisting of layers of a non-semiconductor, such as oxygen, inserted into a semiconductor material, so that epitaxial growth is preserved. These layers can be used to modify or enhance the basic semiconductor properties and device attributes in a number of ways, including: diffusion blocking, variability, mobility, gate leakage, and reliability, among others.
Pour en savoir plus :Atomera and Synopsys extend collaboration into GaN modelling
