This paper presents a novel deep trench-type SiC MOSFET integrated with Schottky diodes (DT-JMOS) designed to improve oxide reliability and switching performances. In contrast to conventional SiC trench MOSFET with Schottky diodes (CT-JMOS), the DT-JMOS utilizes a narrower JFET region and a P-bot structure, resulting in superior electric field reductions in gate oxide layer to improve reliability. The unique structure also enables double-channel operation and deeper embedded Schottky contacts, significantly enhancing the current conduction capabilities in both the first and third quadrants. Furthermore, simulation results indicate that the DT-JMOS achieves a 97.6 % decrease in gate-to-drain capacitance (Cgd), leading to a 67.5 % improvement in gate-to-drain charge (Qgd), and eventually resulting in reductions by factors of 3.2 and 3.5 for figure of merit Qgd × Ron,sp and total switching losses (Etotal), respectively. These attributes suggest that the DT-JMOS is more suitable for high-voltage and high-frequency applications.
Pour en savoir plus : A deep trench-type SiC MOSFET integrated with Schottky diode for enhanced oxide reliability and switching performances