Silicon carbide (SiC) power converters are increasingly used in automotive, renewable energy, and industrial applications. While reliability assessments are typically performed at either the device or system level, an integrative approach that simultaneously evaluates both levels remains underexplored. This article presents a novel system-level simulation method with two strategies to evaluate the reliability of power devices and a resonant converter under varying temperatures and total ionizing doses (TIDs). Temperature-sensitive electrical parameters (TSEPs), such as on-state resistance (𝑅ON) and threshold voltage shift (Δ𝑉TH), are calibrated and analyzed using a B1505A curve tracer.
A New Simulation Method to Assess Temperature and Radiation Effects on SiC Resonant-Converter Reliability
