Accurate and efficient modeling of AlGaN/GaN HEMTs is essential for the design of next-generation power electronics. This study introduces a hybrid Auxiliary Classifier Generative Adversarial Network (ACGAN)–mixup data augmentation framework to enhance deep neural network application in AlGaN/GaN high-electron-mobility transistor modeling with limited data. Based on only 20 distinctive devices, ACGAN uses technology computer-aided design (TCAD)-calibrated data to generate high-quality synthetic drain current (𝐼𝑑𝑠) under various electronic bias conditions. The quality of the generated data is validated via Jensen–Shannon divergence with an average of 0.0341. A one-dimensional convolutional neural network (1D-CNN) predictive model is trained on augmented data and achieves stable convergence, with a mean absolute error of 0.002 A/mm for the off-state 𝐼𝑑𝑠 and 0.052 A/mm for the linear region. It also shows improved robustness over the model trained on original non-augmented data. The proposed approach offers a low-cost alternative to resource-intensive TCAD simulations, enabling accurate device modeling with limited data.
