Researchers based in USA and Japan report the demonstration of more than 10kV enhancement-mode (E-mode) gallium oxide (Ga2O3) lateral junction field-effect transistors (JFETs) with nickel oxide (NiO) reduced-surface-field (RESURF) structures and hybrid-drain, operating up to 250°C [Yuan Qin et al, IEDM, session 25-5, 2024].
The team from Virginia Tech and the US Naval Research Laboratory in the USA and Novel Crystal Technology in Japan presented their work at the IEEE International Electron Devices Meeting (IEDM 2024) in December. The researchers comment: “Our device demonstrates the highest average E-field, as well as the first report of 250°C operation and 3kV reliability data in a high-voltage transistor beyond silicon carbide (SiC).”
Pour en savoir plus : Gallium oxide JFETs reach beyond 10kV breakdown