Navitas has announced the launch of its 5th-generation GeneSiC technology platform. The High Voltage (HV) SiC Trench-Assisted Planar (TAP) MOSFET technology is claimed to represent a significant technological leap over previous generations.
The technology, which will be used to make 1200V devices, complements Navitas’ ultra-high voltage (UHV) 2300 V and 3300 V technologies from the 4th generation GeneSiC platform.
The 5th generation MOSFET platform features Navitas’ most compact TAP architecture yet, combining the ruggedness of a planar gate with high performance enabled by a trench structure in the source region while also elevating the efficiency and life-time reliability for high-voltage power electronics.
Pour en savoir plus : Navitas unveils 5th gen SiC technology
Navitas unveils 5th gen SiC technology
