Robust C–V Ratio Technique for Profiling Defects in Proton-Irradiated 4H-SiC

Silicon carbide (SiC) power devices possess exceptional electrical and thermal properties, making them strong candidates for deployment in extreme environments such as space. However, displacement damage induced by high-energy particles remains a critical factor that can compromise long-term reliability, underscoring the need for accurate defect characterization. Conventional C–V doping-profile extraction uses numerical differentiation, which amplifies measurement noise and reduces accuracy and reproducibility. We present an analytical model that removes numerical differentiation by using the ratio of C–V characteristics measured before and after irradiation. This approach enables direct, stable, quantitative extraction of net radiation-induced trap density.