A room-temperature bonding technique for integrating wide-bandgap materials such as gallium nitride (GaN) with thermally conducting materials such as diamond could boost the cooling effect on GaN devices and facilitate better performance through higher power levels, longer device lifetime, improved reliability and reduced manufacturing costs, reports the USA’s Georgia Tech, in collaboration with Japan’s Meisei University and Waseda University (Zhe Cheng et al, ‘Interfacial Thermal Conductance across Room-Temperature-Bonded GaN/Diamond Interfaces for GaN-on-Diamond Devices’, ACS Appl. Mater. Interfaces, 2020, 12, 8376−8384). The work was supported by a multi-disciplinary university research initiative (MURI) project (grant no. N00014-18-1-2429) from the US Office of Naval Research (ONR). The technique could have applications for wireless transmitters, radars, satellite equipment and other high-power and high-frequency electronic devices.