STMicroelectronics’ STGAP2SiCSN single-channel gate driver, optimized to control silicon-carbide MOSFETs, comes in a space-saving narrow-body SO-8 package and delivers robust performance with accurate PWM control.
As SiC technology becomes widely adopted to boost power-conversion efficiency, the STGAP2SiCSN simplifies design, saves space, and enhances robustness and reliability in energy-conscious power systems, drives, and controls. Applications include electric-vehicle charging systems, switched-mode power supplies, high-voltage power-factor correction (PFC), DC/DC converters, uninterruptible power supplies (UPS), solar power, motor drives, fans, factory automation, home appliances, and induction heating.
Featuring galvanic isolation between the gate-driving channel and the low-voltage control, the STGAP2SiCSN operates with up to 1700V on the high-voltage rail. The input-to-output propagation time of less than 75ns ensures high PWM accuracy, with reliable switching thanks to common-mode transient immunity (CMTI) of ±100V/ns. Built-in protection includes under-voltage lockout (UVLO), with a threshold tuned to prevent SiC power switches from operating in low-efficiency or unsafe conditions, and thermal shutdown that turns both driver outputs low if excessive junction temperature is detected.