The 1st Call for Proposals for Clean Aviation has been launched! The list of topics and topic descriptions are currently available via the JU website: here. Important Note: All the Call documentation (e.g. list of topics and topic descriptions, call background...
Le module optique/NanoRF de TE Connectivity intègre dans un même boîtier compatible avec le format VPX, interconnexions optiques de type MT et radiofréquences afin de répondre aux exigences des applications de défense nécessitant de fortes bandes passantes. ...
Gallium-nitride (GaN) power semiconductors are well-established, but compared with silicon (Si) devices, GaN is still an evolving power device technology. Most power designers have at least explored the use of GaN, whether it’s been depletion-mode (d-GaN) normally-on...
GaN HEMTs are very reliable, but the precise answer is still being refined. Reliability relates to anticipated useful life and is typically measured in mean-time-to-failure. Reliability can be anticipated and determined in advance by testing and measurement. Proving...
Enhancement mode (e-mode) GaN high electron mobility transistors (HEMTs) generally behave like n-channel power MOSFETs. Common curve tracers, parametric analyzers, and automatic discrete device parametric testers used for an n-channel power MOSFET can be applicable...
