7 06 2021 | Actualité Défense et Sécurité, Actualité Aéronautique
Grâce à une structure originale permettant de porter la tension de claquage de grille des transistors HEMT 150V en GaN à 8V contre 6V habituellement, le Japonais Rohm rend ces composants plus fiables et plus simples à contrôler. De quoi favoriser l’adoption du GaN à...
31 05 2021 | Actualité Aéronautique, Actualité Défense et Sécurité
Power SiC MOSFETs are going to substitute Si devices by to their significantly better performances that make them much suitable in power switching applications such as electric/hybrid vehicles. The increasingly use of these devices in critical mission profiles...
10 05 2021 | Actualité Défense et Sécurité
JEP184 provides definitions and procedures for characterizing the threshold voltage instability of SiC-based power electronic conversion semiconductor devices having a gate dielectric region biased to turn devices on and off. Bias Temperature Instabilities (BTI)...
10 05 2021 | Innovation et technologie
Power switches based on the wide bandgap (WBG) material gallium nitride (GaN) enable excellent efficiency and high switching frequency, starting a new era in power electronics. To support this development, Infineon Technologies AG adds the new CoolGaN IPS family of...
10 05 2021 | Innovation et technologie
Geneva, May 6, 2021 – STMicroelectronics (NYSE: STM), a global semiconductor leader serving customers across the spectrum of electronics applications, has announced a new family of ST Intelligent and Integrated Gallium Nitride (GaN) solutions, STi2GaN. STi2GaN is an...
