The rapid advancement of electronic technology has enhanced the integration and performance of electronic devices, yet it has also posed significant thermal management challenges, especially for highpower GaN-based electronic devices. These devices exhibit a...
STMicro annonce de nouveaux composants de puissance intégrant la technologie GaN (gallium-nitrure) destinés aux moteurs d’électroménager et d’automatisation industrielle. Selon la société, ces circuits GaNSPIN permettent d’accroître...
Power conversion has become a critical focus in the race to make satellite and communications payloads lighter, smaller, and more energy-efficient. Airbus Crisa’s latest development, the Antenna Power Regulator (APR) module, represents a decisive step forward. Funded...
With 5G-advanced, the data consumption between wireless equipment is predicted to follow exponential growth. To allow that, there is a need to increase the bandwidth with RF chips that fulfill 2 criteria: performance in the range of 24-100 GHz and affordability, for...
Enhanced AlGaN-GaN high-electron-mobility transistors (HEMTs) offer significant advantages for high-reliability circuit design. This study proposes a hybrid gate structure combining a p-GaN cap with a recessed gate, utilizing a double-barrier AlGaN-Ga-AlGaN gate stack...
