Gallium-nitride (GaN) power semiconductors are well-established, but compared with silicon (Si) devices, GaN is still an evolving power device technology. Most power designers have at least explored the use of GaN, whether it’s been depletion-mode (d-GaN) normally-on...
GaN HEMTs are very reliable, but the precise answer is still being refined. Reliability relates to anticipated useful life and is typically measured in mean-time-to-failure. Reliability can be anticipated and determined in advance by testing and measurement. Proving...
Enhancement mode (e-mode) GaN high electron mobility transistors (HEMTs) generally behave like n-channel power MOSFETs. Common curve tracers, parametric analyzers, and automatic discrete device parametric testers used for an n-channel power MOSFET can be applicable...
Rouen, le 07 février 2022 – Regroupement d’experts de la fiabilité des systèmes et des composants électroniques, le Centre Français de Fiabilité (CFF) concourt à une meilleure fiabilité des systèmes de plus en plus complexes et intégrés, et développés dans des temps...
Electric vehicles are increasingly driving on our roads, the majority of them are powered by a battery (BEV) and only a few models by a fuel-cell. The foreseeable future for passenger vehicles is in BEVs and for trucks perhaps in hydrogen-driven fuel cells, since...
