11 05 2020 | Innovation et technologie
In this paper, the advantages of SiC power modules to reduce peak junction temperature and power cycling effects are presented. A detailed power loss calculation and thermal model is developed and tested on a 480 V, 190A, 150 HP variable frequency drive (VFD) with SiC...
11 05 2020 | Innovation et technologie
Temperature estimation of MOSFET is crucial, for failure of semiconductors is closely related to the junction temperature. In order to improve the reliability of semiconductor devices, it is necessary to realize on-line temperature monitoring. However, it remains a...
11 05 2020 | Innovation et technologie
Although GaN high electron mobility transistors (HEMTs) are one of the most promising semiconductor technologies for high power and high frequency applications, high device temperatures often lead to degraded performance and reliability. Most reports on the thermal...
11 05 2020 | Innovation et technologie
For various pulsed power electronics like, metal oxide semiconductor field-effect transistor (MOSFET), insulating gate bipolar transistor (IGBT), Gate turn-off thyristor (GTO), Integrated gate-commutated thyristor (IGCT), heat loads are often in the range of 10W/cm2...
11 05 2020 | Innovation et technologie
This work describes the development of a single phase water-cooled microfluidic heat exchanger for cooling very high heat flux electronics. The heat sink was designed for a unique additive manufacturing process capable of manufacturing millimeter-scale metallic parts...
