Gallium arsenide (GaAs) offers unique advantages in the fields of 5G communications and optoelectronics owing to its ultrahigh electron mobility and direct bandgap. However, its inherent low thermal conductivity leads to significant self-heating effects, which─along...
Extreme conditions in interplanetary environments, like lunar night at -173°C and Martian dust storms, require new thermal control systems that go beyond traditional electronics cooling approaches. Martian dust consists primarily of iron-oxide and silicate particles...
Creating high-quality datasets for training machine learning models in specialized domains like pharmaceutical research is often constrained by the manual effort required to extract and compute critical parameters from heterogeneous literature. A novel deep...
The on-state resistance RDSON is a key aging indicator of silicon carbide MOSFETs power module. It can provide information on both chip and packaging degradation allowing more reliable power electronic converter. This on-state resistance can be determined using both...
The on-state resistance RDSON is a key aging indicator of silicon carbide MOSFETs power module. It can provide information on both chip and packaging degradation allowing more reliable power electronic converter. This on-state resistance can be determined using both...
![In-depth 2D FEM analysis of gate cracking in SiC MOSFETs under repetitive short-circuit conditions: Application of a damage-based model for crack length prediction [ESREF’25 Selected and Extended Full-Paper]](https://www.nae.fr/wp-content/uploads/2024/12/hal-logo-text-1.png){kind=logo}
