The space and defense industries face the critical challenge of delivering enhanced compute power in compact, efficient packages without compromising reliability or performance. In defense-related applications, in-orbit computing is the backbone of rapid-response superiority, enabling real-time imaging and communication. Gallium nitride (GaN) high-electron mobility transistors (HEMTs) are emerging as a transformative technology for these high-reliability sectors.
Pour en savoir plus : The next frontier: GaN HEMTs for high-reliability space and defense power architectures
