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The EPC7018 joins the company’s EPC7014, EPC7007, EPC7019 in its Rad-Hard family. All are offered in a chip-scale package, the same as the commercial eGaN FET and IC family. Packaged versions will be available from EPC Space.

GaN has higher breakdown strength, lower gate charge, lower switching losses, better thermal conductivity and very low on-resistance, compared with silicon-based devices, claims EPC, enabling higher switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions. GaN devices also support higher total radiation levels and SEE LET levels than silicon, continued EPC.

Source : Power Electronics Europe News