Wide-bandgap (WBG) power electronics devices reduce component size, increase efficiency, and improve performance for hybrid and all-electric vehicles. In particular, gallium nitride’s (GaN) exceptionally high electron mobility and low temperature coefficient allows for very low on-resistance (RDS(on)), while its lateral device structure and majority carrier diode provide low total gate charge (QG) and zero reverse-recovery charge (QRR).


The end result is a device that can handle tasks where very high switching frequency—which translates into lower switching losses and lower drive power—and low on-time are beneficial. It also improves results where on-state losses might otherwise dominate.

Source : 350-V GaN Transistor: 20X Smaller than Comparable Silicon and Lower Cost | Electronic Design