Bosch has announced its 3rd generation SiC MOSFETs, based on the company’s dual-channel trench SiC architecture with lower on-resistance, better ruggedness, and smaller chip sizes for broader EV adoption.
A 20 percent reduction in specific on-resistance, around 10 percent higher short-circuit withstand capability, and a 40 percent thinner die enable clear efficiency gains and more cost-effective power module designs, according to the company.
At the same time, the reduced die size has a direct impact on production efficiency and system-level costs, further supported by the transition to 200 mm wafer manufacturing, which increases chip output per wafer.
Pour en savoir plus :Bosch launches 3rd generation SiC MOSFETs
