Temperature estimation of MOSFET is crucial, for failure of semiconductors is closely related to the junction temperature. In order to improve the reliability of semiconductor devices, it is necessary to realize on-line temperature monitoring. However, it remains a challenge to measure the junction temperature fast and precisely, especially for high-switching-frequency devices, such as silicon carbide (SiC) MOSFET devices. To realize on-line junction temperature monitoring of SiC MOSFETs, this paper propose
A Novel Method for Monitoring the Junction Temperature of SiC MOSFET On-line Based on On-state Resistance – IEEE Conference Publication
