Efficient heat dissipation across GaN/SiC interfaces is critical for the reliability of high-power devices, yet their interfacial thermal transport behavior remains insufficiently understood. Here, using a high-fidelity machine-learning interatomic potential, we perform systematic nonequilibrium molecular dynamics simulations to quantify and engineer the interfacial thermal conductance (ITC) of device-relevant SiC/GaN heterostructures. The results show that Al-rich AlxGa1−xN alloy interlayers and ultrathin amorphous layers can act as efficient phonon bridges for the strongly mismatched SiC/GaN interface by enhancing mid-frequency 5–15 THz transmission channels. In particular, a 1 nm Al0.75Ga0.25N interlayer markedly elevates the SiC/GaN ITC from ~ 243 to an unprecedented ~ 417 MW m−2K−1, corresponding to a 71% enhancement over the abrupt interface, whereas a 1 nm amorphous interlayer increases the ITC to ~ 384 MW m−2K−1.
Pour en savoir plus : Achieving optimal GaN/SiC interfacial thermal conductance via ultrathin alloy interlayers for high-power device cooling
