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For reliability predictions, gallium nitride transistors require accurate estimations of the peak operating temperatures within the device. This article presents a new application of thermoreflectance-based temperature measurements performed on a gallium nitride high electron mobility transistor. The submicron spatial and nanosecond temporal resolutions of the measurement system enables for the first time, the dynamic temperature measurement of a transistor operating up to 5 MHz. The gallium nitride transis

Source : Dynamic Temperature Measurements of a GaN DC–DC Boost Converter at MHz Frequencies – IEEE Journals & Magazine