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ROHMs 150V GaN HEMTs, GNE10xxTB series (GNE1040TB) improve the gate withstand voltage (rated gate-source voltage) to an industry-leading 8V – ideally to be used in power supply circuits for industrial equipment including base stations and data centres together with IoT communication devices.

Due to the growing demand for server systems in response to the increasing number of IoT devices – enhancing power conversion efficiency and decreasing size have become crucial social issues that need further advancements in the power device sector.

Source : GaN HEMTs feature breakthrough withstand gate voltage