A technical paper titled “Stability, Reliability, and Robustness of GaN Power Devices: A Review” was published by researchers at Virginia Polytechnic Institute and State University, Johns Hopkins University Applied Physics Laboratory, and Kyushu University.

“Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and form factor of power electronics. However, the material composition, architecture and physics of many GaN devices are significantly different from silicon and silicon carbide devices. These distinctions result in many unique stability, reliability and robustness issues facing GaN power devices. This paper reviews the current understanding of these issues, particularly those related to dynamic switching, and their impacts on system performance,” states the paper.

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