GaN Systems Inc of Ottawa, Ontario, Canada (a fabless developer of gallium nitride-based power switching semiconductors for power conversion and control applications) has announced availability of its GaN transistor ADS (Advanced Design System) models to facilitate customer ease-of-use in RF power markets traditionally dominated by expensive silicon LDMOS and other RF power technologies. By replacing these existing devices with GaN Systems’ power semiconductors at frequencies of typically 13-81MHz, customers can benefit from high power output and efficiency while reducing the size and at about 1/3 the cost of their existing solutions, the firm says.
The availability of the ADS models is a key ingredient for high-frequency design. GaN Systems’ power transistors, such as its GS66502B and GS66508B, have been implemented in several applications. Capable of operating up to 100MHz and at power levels from 2kW to 250kW, applications include RF heating and drying systems, high-frequency radar systems, CO2 lasers, RF defrosters, communication jammers, and plasma generators.