WEST PALM BEACH, Fla. – Solitron Devices Inc. in West Palm Beach, Fla., is introducing the SD11487 hermetically sealed silicon carbide (SiC) power module for high-reliability applications in avionics, space, and down-hole exploration.
The 51-by-30-by-8-millimeter outline is a small hermetically sealed high reliability, high voltage, half-bridge that makes the most of power density while minimizing loop inductance.
60-mil pins for the power output stage are isolated on one side of the package for simple power busing while 30-mil pins on the opposite side control signals.
The SD11487 is a half bridge configuration with two 1200-volt SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). Also included in the module are two freewheeling 1200-volt SiC Schottky diodes in parallel with the MOSFETs and an integrated negative temperature coefficient (NTC) temperature sensor. Continuous drain current is 95 amps.