Self-heating in AlGaN/GaN high electron mobility transistors (HEMTs) negatively impacts device performance and reliability. Under nominal operating conditions, a hot-spot in the device channel develops under the drain side corner of the gate due to a concentration of volumetric heat generation leading to nonequilibrium carrier interactions and non-Fourier heat conduction. These subcontinuum effects obscure identification of the most salient processes impacting heating. In response, we examine self-heating i

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