ON Semiconductor has announced a pair of 1200 V full SiC MOSFET 2-PACK modules further enhancing their range of products suitable for the challenging electric vehicle (EV) market.
As sales of EV continue to grow, infrastructure must be rolled-out to meet the needs of drivers, providing a network of rapid charging stations that will allow them to complete their journeys quickly and without ‘range anxiety’. Requirements in this sector are rapidly evolving, requiring power levels in excess of 350 kW and efficiencies of 95% becoming the ‘norm’. Given the diverse environments and locations in which these chargers are deployed, compactness, robustness and enhanced reliability are all challenges that designers face.
The new 1200 V M1 full SiC MOSFET 2 pack modules, based upon planar technology and suited to a drive voltage in the range of 18-20 V, are simple to drive with negative gate voltages. The larger die reduces thermal resistance compared to trench MOSFETs, thereby reducing die temperature at the same operating temperature.