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ON Semiconductor has announced a new range of silicon carbide (SiC) MOSFET devices for applications where power density, efficiency and reliability are key considerations.

By replacing existing silicon switching technologies with the new SiC devices, designers will be able to achieve significantly better performance in applications such as electric vehicles (EV) on-board chargers (OBC), solar inverters, server power supply units (PSU), telecoms and uninterruptible power supplies (UPS).

ON Semiconductor’s Automotive AECQ101 and Industrial grade qualified 650 volt (V) SiC MOSFETs are based upon a new wide bandgap material that provides superior switching performance and improved thermals when compared to silicon. This results in improved efficiency at the system level, enhanced power density, reduced electromagnetic interference (EMI) and reduced system size and weight.

Source : OnSemi announces 650V Silicon Carbide MOSFETs