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Oxford Instruments alongside its research partner Industrial Technology Research Institute (ITRI) has developed a new GaNHEMT device architecture, defined by a recessed and insulated gate junction into the AlGaN layer. The new device is called a GaN MISHEMT.

The technology developments allow critical transistor components to operate at higher voltages to increase performance and reliability, while also achieving a safer and more energy efficient (normally off ‘E-mode’) operation compared to existing devices.

Oxford Instruments Plasma Technology and ITRI started their collaborative research program for next-gen compound semiconductors in 2021. This latest breakthrough comes from that partnership. In the meantime, Oxford Instruments unveiled an exclusive supply deal with Laytec, whose endpoint technology is used to control the GaN MISHEMT recess gate depth. Recess depth accuracy and repeatability is critical to tune the device performance characteristics.

Pour en savoir plus : Oxford Instruments And ITRI Develop Novel GaN Architecture