Power switches based on the wide bandgap (WBG) material gallium nitride (GaN) enable excellent efficiency and high switching frequency, starting a new era in power electronics. To support this development, Infineon Technologies AG adds the new CoolGaN IPS family of integrated power stage (IPS) products to its broad portfolio of WBG power devices. The initial IPS portfolio consists of half-bridge and single-channel products, targeting low-to-medium power applications, including chargers and adapters and switched-mode power supplies (SMPS).

The 600 V CoolGaN half-bridge IPS IGI60F1414A1L is ideally suited for compact and lightweight designs in the low-to-medium power range. Coming in a thermally enhanced 8×8 QFN-28 package, it enables systems with very high power density. The product combines two 140 mΩ / 600 V CoolGaN e-mode HEMT switches with dedicated galvanically isolated high- and low-side gate drivers out of Infineon’s EiceDRIVER family.

Source : Power modules combine 600-V GaN switches with gate drivers – Power Electronic Tips