SiC lateral high voltage bi-directional field effect transistor

This technology is a compact silicon carbide transistor that can conduct and block high voltages in both directions, improving efficiency and integration in power electronics for applications like inverters and converters.

Background:

Power electronics is a critical field that underpins a vast array of modern technologies, from renewable energy systems and electric vehicles to industrial automation and advanced power conversion systems. Central to these applications are semiconductor devices such as field-effect transistors (FETs), which control the flow and blocking of electrical current within circuits. As demand for higher efficiency, compactness, and reliability in power systems grows, there is an increasing need for devices capable of handling high voltages and currents while maintaining robust performance.