Vishay Intertechnology has launched 17 third generation 650 V silicon carbide (SiC) Schottky diodes for more reliable power supply designs.

The devices use a merged PIN Schottky (MPS) design to combine high surge current robustness with low forward voltage drop, capacitive charge, and reverse leakage current to increase efficiency and reliability in switching power designs.

The RoHS-compliant and halogen-free diodes have passed higher temperature reverse bias (HTRB) testing of 2000 hours and temperature cycling testing of 2000 thermal cycles. This is double the testing hours and cycles of AEC-Q101 requirements.

Typical applications for the devices will include AC/DC PFC and DC/DC ultra high frequency output rectification in FBPS and LLC converters for energy generation and exploration applications.

The SiC diodes range from 4A to 40A in TO-22OAC 2L and TO-247AD 3L through-hole and D²PAK 2L (TO-263AB 2L) surface-mount packages. The MPS structure reduces the forward voltage drop by 0.3 V compared to previous-generations while their forward voltage drop times capacitive charge — a key figure of merit (FOM) for power efficiency — is 17 % lower.

Pour en savoir plus : SiC merged Schottky diodes boost power supply reliability