3 02 2025 | Innovation et technologique
Silicon carbide (SiC) MOSFETs are known for their superior performance compared to traditional silicon devices, making them well-suited for a wide range of applications in power electronics. However, there is a lack of long-term reliability studies for SiC MOSFETs...
27 01 2025 | Innovation et technologique
SemiQ Inc of Lake Forest, CA, USA — which designs, develops and manufactures silicon carbide (SiC) power semiconductors and 150mm SiC epitaxial wafers for high-voltage applications — has announced a family of 1700V SiC MOSFETs designed to meet the needs of...
27 01 2025 | Innovation et technologique
La plateforme XSICM03 de nouvelle génération offre une réduction de la taille des cellules de conception tout en maintenant des contrôles de processus robustes, ainsi que des performances de fuite et de rupture des dispositifs. La plateforme XSICM03 avec des règles de...
16 12 2024 | Innovation et technologique
The fluctuation of the threshold voltage (Vth) presents a challenge while monitoring electrical drift in reliability studies of GaN HEMTs. While technologies, such as ohmic p-GaN, may lessen V th fluctuations, the issue of recoverable charge trapping still remains....
16 12 2024 | Innovation et technologique
Santa Clara, CA and Kyoto, Japan, Dec. 12, 2024 (GLOBE NEWSWIRE) — ROHM Semiconductor today announced the adoption of its PMICs in power reference designs focused on the next-generation cockpit SoCs Dolphin3 (REF67003) and Dolphin5 (REF67005) by Telechips, a...
